Mechanical stress caused by adsorption of O or N on a ga-terminated [100] GaAs surface: O gives compressive stress but N don't

Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor

“…Due to the ''imperfect recovery'', the device showed hysteresis in the current-voltage curves. However, considering the influence of atomic bond structure of the I/S interface, 5) perfect recovery is expected if an atomic flat I/S interface is realized. Such an interface can possibly be realized by utilizing the selective oxidation property of the InAlAs/ InGaAs heterojunction.…”

“…This may be due to the uncontrolled storage time in the room air before the oxidation. Seto et al explained that the degradation then recover process reflects a change in bond structure and the mechanical stress existing at the interface, 5) although such structural details have not been experimentally identified yet. Group-C wafers were nitrided by N 2 plasma at room temperature for different process periods using the helicon wave plasma generation system (sanyu, SHR-708) shown in Fig.…”

n‐Channel p‐channel enhancement/inversion mode GaAs‐MISFETs with gate insulating layers formed by dry oxi‐nitridation

“…As a result, a high-quality insulating film/GaAs interface is obtained. For improvement of the crystal properties of GaAs near the interface, the annealing effect of nitrogen plasma [6] and the variation of the coupling state at the interface [7] can be considered. The detailed mechanisms of these approaches are not clear.…”

Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces

“…When the adsorption height at the bridge site is not quite different from the atomic layer distance of (100) GaAs (1.413 A), the adsobates do not cause a high stress, and hence such defects and disorder are not generated, as far as the critical thickness is not exceeded. Seto et al 10,16) reported that O adsorbs at the bridge sites of a Ga plane with an extremely low height (nearly zero) and generates a high stress, which very possibly generates defects or disorders, although whether the stress is accumulated or relaxed depends on the details of the bond structure between O and Ga. 16) Si and Ge, as well as S, Te, Se (passivation effect of these were reported), stably bind with the surface Ga or As atoms with heights of more than 1…”

“…A, and hence have little influence on the tetrahedral symmetry of (100) GaAs as compared with O. 8,10) This suggests that both Si and Ge are effective materials from this point of view too. They bind with surface Ga or As atoms without strongly distorting the tetrahedral symmetry.…”