Mechanical strength problem of thin silicon wafers (120 and 140 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:mi mathvariant="normal">μ</mml:mi><mml:mi mathvariant="normal">m</mml:mi></mml:mrow></mml:math>) cut with thinner diamond wires (Si kerf 120 → 100 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:mi mathvariant="normal">μ</mml:mi><mml:mi mathvariant="normal">m</mml:mi></mml:mrow></mml:math>) for photovoltaic use

Sekhar, Halubai; Fukuda, Tetsuo; Tanahashi, Katsuto; Takato, Hidetaka; Ono, Hiromichi; Sampei, Yoshiyuki; Kobayashi, Tetsuo

doi:10.1016/j.mssp.2020.105209

Cited by 30 publications

(17 citation statements)

References 37 publications

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“…Diamond-wire cutting techniques are used to process silicon wafers due to the advantages of low surface damage and high efficiency [ 2 , 3 ]. However, diamond-wire cutting causes edge collapse, hidden crack and surface damage in the wafer fabrication and then results in mechanical problems [ 4 ] due to the brittleness and crystal defects of silicon. Meanwhile, it is hard to study the mechanical performance of monocrystalline silicon via experimental methods.…”

Section: Introductionmentioning

confidence: 99%

General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

et al. 2021

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Mechanical anisotropy and point defects would greatly affect the product quality while producing silicon wafers via diamond-wire cutting. For three major orientations concerned in wafer production, their mechanical performances under the nanoscale effects of a point defect were systematically investigated through molecular dynamics methods. The results indicated anisotropic mechanical performance with fracture phenomena in the uniaxial deformation process of monocrystalline silicon. Exponential reduction caused by the point defect has been demonstrated for some properties like yield strength and elastic strain energy release. Dislocation analysis suggested that the slip of dislocations appeared and created hexagonal diamond structures with stacking faults in the [100] orientation. Meanwhile, no dislocation was observed in [110] and [111] orientations. Visualization of atomic stress proved that the extreme stress regions of the simulation models exhibited different geometric and numerical characteristics due to the mechanical anisotropy. Moreover, the regional evolution of stress concentration and crystal fracture were interrelated and mutually promoted. This article contributes to the research towards the mechanical and fracture anisotropy of monocrystalline silicon.

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Section: Introductionmentioning

confidence: 99%

General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

et al. 2021

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“…Wafer slicing is an essential step in the fabricating of electronic device chips, which transforms crystalline materials from sticks to flakes. Multi-wire sawing with diamond wire saw is the main technology used in the semiconductor industry for slicing sapphire (Kim et al, 2013(Kim et al, , 2015Lee et al, 2016), silicon carbide (Maeda et al, 2014;Huang et al, 2016;Wang et al, 2017;Zhao et al, 2021) and silicon ingots (Chen et al, 2019;Sekhar et al, 2020). However, during the multi-wire sawing process, the diamond wire saw would inevitably wear out (Kumar et al, 2016;Knoblauch et al, 2018;Yin et al, 2021).…”

Section: Introductionmentioning

confidence: 99%

Influence of cutting parameters on wear of diamond wire during multi-wire rocking sawing with reciprocating motion

2022

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Multi-wire cutting with diamond wire saw has gradually become the main processing method for hard-and-brittle materials due to its small kerf loss and high machining accuracy. However, the diamond wire saw will inevitably suffer wear during the process of machining, and hence affects the quality of the cut surface. In this paper, a wire saw wear model was established, and the wear at different positions on the wire saw was theoretically calculated by correlating the volume of the workpiece removed by the unit wire saw to the wire saw wear. The iteration method was used to calculate the wear of the wire saw after cutting by superimposing the wear caused by every monolithic wafer. Based on this wear year model of the wire saw, the influence of multi-wire cutting parameters and the shapes of the workpiece on the wire saw wear was discussed through numerical simulation. The simulation results showed that the feed speed of the workpiece and the length of the wire saw had an obvious effect on the maximum wear of the wire saw, and the maximum rocking angle, wire speed, and reciprocating times had little effect on the maximum wear of the wire saw. The wear curve of the circular workpiece wire saw is unstable in the whole process, and the wear curve of the rectangular workpiece wire saw changes at the beginning and end, and the middle is stable.

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“…При оценке прочности плаcтин в качестве способа нагружения обычно используют трех-или четырехточечный одноосный изгиб полосок [1][2][3], биаксиальный (осесимметричный) изгиб [4][5][6], реже индентирование [7] и гидростатическое давление [8]. Расчет прочности проводится либо по формулам классической теории упругости в соответствии со стандартом ASTM C 1161-02c для случая одноосного изгиба или ASTM C 1499-15 для осесимметричного изгиба [2,3], либо методом конечных элементов (finite element method) [1,[4][5][6]. Недостатком методов трех-или четырехточечного изгиба является то, что разрушение пластины вызывается концентраторами напряжений на краях пластины.…”

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“…Для эпитаксиально выращенных слоев кремния пластины после двухстадийной полировки имели среднюю прочность 0.75 GPa. Результаты для образцов после механической обработки близки к известным литературным данным [1][2][3][4][5]. Образцы после описанной выше двухступенчатой ХМП имели большую прочность по сравнению с приведенной в работах [4,5] для образцов после обычной одноступенчатой химической полировки, что свидетельствует о возможности кремния противостоять высоким нагрузкам.…”

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Исследование Прочности Тонких Пластин Кремния В Зависимости От Методов Обработки Их Поверхности При Утонении

Козлов¹,

Николаев²,

Шпейзман³

et al. 2022

Письма В Журнал Технической Физики

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The mechanical strength of silicon wafers of 100 µm thickness was studied. Loading of the wafers was carried out by the “ring-on ring” method, stress and deflection under the small ring were determined by finite element modeling. The validity of the calculation model was checked by comparing the dependences of the deflection under the small ring on the load obtained in the experiment and by the simulation. The effect of methods of wafers obtaining and their surface treatment on the strength, as well as the connection between the strength and surface roughness characteristics were shown.

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Mechanical strength problem of thin silicon wafers (120 and 140 μm) cut with thinner diamond wires (Si kerf 120 → 100 μm) for photovoltaic use

Cited by 30 publications

References 37 publications

General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

Influence of cutting parameters on wear of diamond wire during multi-wire rocking sawing with reciprocating motion

Исследование Прочности Тонких Пластин Кремния В Зависимости От Методов Обработки Их Поверхности При Утонении

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