Mechanical property measurements of nanoscale structures using an atomic force microscope

Sundararajan, Sriram; Bhushan, Bharat; Namazu, Takahiro; Isono, Yoshitada

doi:10.1016/s0304-3991(02)00089-x

Cited by 96 publications

(59 citation statements)

References 14 publications

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“…One of the crucial issues during etching process is its effect on the surface roughness of the resulting silicon film surface. The roughness of silicon <100> surfaces caused by etching can affect their nanotribological (friction and wear) behavior [33,34] as well as mechanical properties of the microscale structures [35][36][37]. Experimental studies on the measurement of the roughness of the etched surfaces [38,39] have shown that the roughness of the etched surface depends upon the temperature and concentration of KOH etchant [40][41][42].…”

Section: Device Fabricationmentioning

confidence: 99%

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Chattopadhyay¹,

Overton²,

Vetter³

et al. 2010

JSTS:Journal of Semiconductor Technology and Science

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Abstract-An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

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Section: Device Fabricationmentioning

confidence: 99%

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Chattopadhyay¹,

Overton²,

Vetter³

et al. 2010

JSTS:Journal of Semiconductor Technology and Science

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“…Nanofibers in particular, Source: Nanofibers, Book edited by: Ashok Kumar, ISBN 978-953-7619-86-2, pp. 438, February 2010, INTECH, Croatia, downloaded from SCIYO.COM have been used for a wide range of applications such as tissue engineering (Bhattarai et al, 2004), filter media (Suthar & Chase, 2001), reinforcement in composites (Chatterjee & Deopura, 2002) and micro/nano-electro-mechanical systems (MEMS/NEMS) (Sundararajan et al, 2002). Such fibers can be made from various materials such as polymers, carbon and semiconductors into the form of continuous nanofibers, nanofibrous networks or short nanowires and nanotubes.…”

Section: Introductionmentioning

confidence: 99%

Nanofiber Reinforced Composite Polymer Electrolyte Membranes

Kumar¹,

Deka²

2010

Nanofibers

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“…Static methods include beam-bending testing and tension testing (Sundararajan et al 2002;Yi and Kim 1999). Dynamic methods usually utilize measured natural frequencies of a simple structure such as a cantilever beam (Peterson and Guarnieri 1979;Burdess et al 1997;Hoummady et al 1997;Tsai et al 2003), a cantilever plate (Ye et al 1996), or a clamped-clamped beam (Wylde and Hubbard 1999), and a simple analytical function linking the Young's modulus of the microstructure and the frequencies.…”

Section: Introductionmentioning

confidence: 99%

Identification of material and geometrical parameters for microstructures by dynamic finite element model updating

Chen¹,

Gau

2006

Microsyst Technol

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This paper describes a procedure to identify material and geometrical parameters for microstructures using the concept of finite element model updating. This scheme utilizes measured and finite element analysis (FEA) natural frequencies that are paired together according to their mode shapes, and it incorporates an optimization sequence that formulates the frequency differences as an error vector to be minimized. To demonstrate the effectiveness of the proposed procedure, two examples are shown in this paper. One example involves a microcantilever fabricated from a singlecrystalline silicon wafer, and the updating process is applied on the cantilever to identify its Young's modulus. The identified Young's modulus (along <100> direction) of 130.29 GPa is very comparable to those in the literature. The other example concerns a commercial, V-shaped silicon nitride probe used in an atomic force microscope. The natural frequencies and mode shapes of the probe are measured, the FEA performed, and the probe thickness and the Young's modulus of the silicon nitride substrate determined. The identified thickness is also verified by SEM images of the probe. Both examples show that the updating procedure converged in just a few iterations.

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Mechanical property measurements of nanoscale structures using an atomic force microscope

Cited by 96 publications

References 14 publications

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Nanofiber Reinforced Composite Polymer Electrolyte Membranes

Identification of material and geometrical parameters for microstructures by dynamic finite element model updating

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