Mechanical property measurement of InP-based MEMS for optical communications

Pruessner, Marcel W.; King, Todd; Kelly, Daniel P.; Grover, R.; Calhoun, L.C.; Ghodssi, Reza

doi:10.1016/s0924-4247(03)00102-x

Cited by 69 publications

(65 citation statements)

References 24 publications

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“…For the field of microelectromechanical systems (MEMS) and microelectronics, the existing of residual stress can seriously influence the reliability and dynamical characteristics of devices [14], [26], [27]. For the structural integrity perspective, one must pre-determine or control the residual stress level to prevent structure failure.…”

Section: Changes Of Materials Microstructure: Certain Changes In Micrmentioning

confidence: 99%

“…Ultrasonic techniques for the measurement of stress are based on variation of the wave speed, (i.e., the acoustoelastic effect) which can be conceptually described by the relation 27) where V 0 is the velocity of a wave in an unstressed medium, σ is the stress and K is a material dependent parameter known as the acoustoelastic constant. Detailed derivation of the acoustoelastic constant and its complete crystallography orentation dependence can be found elsewhere [117].…”

Section: Acoustic and Dynamics Aspectmentioning

confidence: 99%

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Techniques in Residual Stress Measurement for MEMS and Their Applications

Chen

Mems/Nems

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This chapter mainly focuses on the introduction of residual stress characterization of MEMS materials. The origin and classification of residual stress appearing in thin films and MEMS structures are firstly introduced and the essential background of necessary mechanics, which is utilized to convert the measured data into the final residual stress, is followed. Various types of residual stress characterization techniques conducted in MEMS scale are subsequently addressed and reviewed. Finally, a brief discuss on controlling residual stresses and on taking the advantage of residual stress in MEMS applications is briefly discussed.

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Section: Changes Of Materials Microstructure: Certain Changes In Micrmentioning

confidence: 99%

Section: Acoustic and Dynamics Aspectmentioning

confidence: 99%

Techniques in Residual Stress Measurement for MEMS and Their Applications

Chen

Mems/Nems

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“…Some research groups have reported the InP-based MEMS structures for MOEMS applications (Mateus et al 2002;Irmer et al 2003;Boucart et al 2003;Datta et al 2004;Presser et al 2003). The InP-based MEMS devices including their finite element models (FEM) have been also reported in (Greek et al 1999;Bondavalli et al 2001;Shah et al 2004).…”

mentioning

confidence: 99%

“…The InP-based MEMS devices including their finite element models (FEM) have been also reported in (Greek et al 1999;Bondavalli et al 2001;Shah et al 2004). In fact, there are a few research groups who reported the mechanical characterizations using the optical measurement techniques for the InP-based Fabry-Perot filter (Presser et al 2003;Lin et al 2004). This literature also reported some developments of the Fabry-Perot filters with a wavelength tuning range of 30-140 nm.…”

mentioning

confidence: 99%

“…Based on our motivation for this research and the previous research works, we propose a novel InP-based microactuator, which is based on the global optimization method as reported in (Ongkodjojo and Tay 2002;Ongkodjojo et al 2005), and it is different with the previous ones (Mateus et al 2002;Irmer et al 2003;Boucart et al2003;Datta et al 2004;Presser et al 2003;Greek et al 1999;Bondavalli et al 2001;Shah et al 2004;Lin et al 2004;Leclercq et al 2000;Sagnes et al 2003). All the devices in the previously published reports are not based on the optimized designs.…”

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Design, modeling, and mechanical characterizations of micromachined InP-based actuator for tunable MOEMS applications

et al. 2007

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A novel InP-based microactuator, which is actuated by electrostatic means, has been proposed, designed, fabricated, and characterized for tuning applications in the 1.5 lm wavelength domains. Its structural design is based on the global optimization method. The tunable device is a big square membrane, which is supported by four identical cantilever beams. The three alternating layers Si 3 N 4 /SiO 2 as a distributed Bragg reflector (DBR) mirror, which were previously reported, have been formed on the top of the membrane. Based on the optical interferometric measurements, the proposed Fabry-Perot filter has demonstrated a maximum deflection of *321 nm with an applied voltage up to 12 V, an average sensitivity of *27 nm/V, a pull-in voltage of 12.7 V, and a release voltage of 10.7 V. It is also observed that its natural frequency is 88.4 kHz. This measured frequency implies that the tuning speed of our device is fast for optical operations within 0.01 ms. In addition, our device's mirror remains so flat with a good planarity of 0.07°, which is strictly required for the filter's optical performance. This optical performance can be achieved, when the micromachined structure has a tuning displacement up to *38 nm with a low tuning voltage up to 5 V. When compared with the finite element models (FEM), which were generated by the commercialized software, Coventor TM , our experimental results agree well in terms of the natural frequency, pull-in voltage and deflections. Thus, our tunable filter, which is based on the optimized design, enables better performances including reduced actuation voltages, large pull-in voltage, improved device reliability, and fast switching times. Our device can also quickly snap back to the original position. In addition, the undesired spring-softening effect has been reduced.

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Mechanical Properties of 2D Materials Studied by In Situ Microscopy Techniques

Sun

Shan

et al. 2018

Adv Materials Inter

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Two‐dimensional (2D) materials have been demonstrated as promising building blocks in future electronic and their mechanical properties are quite important for various applications. Due to their atomic thickness and planar nature, the investigation of the mechanical properties and related atomic mechanism are quite challenging. This review focuses on the recently developed in situ techniques based on scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atomic force microscopy (AFM) in characterization of the mechanical properties of 2D materials. In situ methods used for studying their elastic properties, fracture behavior, and surface/interface energy are introduced in detail. Specifically, the AFM indentation test and microelectromechanical systems (MEMS) device are generally used to investigate the elastic properties; the manipulator based methods show their flexibility in studying the fracture, adhesion, cleavage, and friction properties; atomic level fracture mechanism can be revealed with in situ high resolution TEM (HRTEM); the pressurized blister test and the buckle/wrinkle based methods are widely used to measure the surface/interface properties. Moreover, the influence of sample preparation process, defects and layer numbers to their mechanical properties are also discussed. Finally, the extensions of above methods to investigate the strain‐modulated physical properties of 2D materials are introduced.

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Mechanical property measurement of InP-based MEMS for optical communications

Cited by 69 publications

References 24 publications

Techniques in Residual Stress Measurement for MEMS and Their Applications

Techniques in Residual Stress Measurement for MEMS and Their Applications

Design, modeling, and mechanical characterizations of micromachined InP-based actuator for tunable MOEMS applications

Mechanical Properties of 2D Materials Studied by In Situ Microscopy Techniques

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