Mechanical Properties Calculation of II-VI Semiconductors: Cd1-yZnyTe(0≤y≤1)

Martínez, Ana María; Soriano, Rosario; Faccio, Ricardo; Trigubó, A.B.

doi:10.1016/j.mspro.2015.04.122

Cited by 8 publications

(5 citation statements)

References 20 publications

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“…This means that our samples are highly anisotropic with the Poisson ratio typical of other related ternaries. 29 The grain sizes obtained with our model are of the order of a few microns, which is reasonable in bulk polycrystalline materials. 30,31 By comparison, the curves obtained from the Scherrer (S) and the Modified Scherrer (MS) equations are also shown in Fig.4.…”

Section: Resultssupporting

confidence: 63%

Microstructural Analysis of AgIn5VI8 (VI: S, Se, Te) Ternary Semiconductors by X-Ray Diffraction

2019

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This work is a study of the microstructural properties of the polycrystalline ternary compounds AgIn 5 S 8 , AgIn 5 Se 8 , and AgIn 5 Te 8 by X-ray diffraction technique (XRD). The full-width-half-maximum (FWHM) of the XRD profile is measured as function of the diffraction angle and used to estimate the microstructural parameters. In general, a microstructural characterization by XRD is principally performed by Strain/Size analysis based on the modified Scherrer formula, which in turn, allows for mean grain size and average microstrain to be computed. However, when applied to polycrystalline bulk semiconductors, the modified Scherrer formula gives grain sizes of the order of a few hundreds of nanometers, which is not usually observed in bulk materials. Instead, a new theoretical scheme with misfit dislocations and plastic deformations would be used to calculate the grain size into a bulk. Assuming that these dislocations are of elastic origin, we were able to calculate the misfit dislocations density as function of the elastic constants of the materials. With this, the modified Scherrer formula is corrected to explain the additional XRD line broadening. All microstructure parameters of our samples increase as the atomic radius of the VI-element increases, with elastic constants similar to related semiconducting compounds.

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Section: Resultssupporting

confidence: 63%

Microstructural Analysis of AgIn5VI8 (VI: S, Se, Te) Ternary Semiconductors by X-Ray Diffraction

2019

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“…

toward the optimization of perovskite thin film growth from simple precursors have improved the efficiency and stability of devices to a high quality standard and low cost, placing them on the verge of commercialization. With a Young's modulus around 20 GPa, [7][8][9][10] perovskites are mechanically softer than most other PV materials such as silicon (>160 GPa), [11,12] GaAs (≈85 GPa), [13] CIGS (≈80 GPa), [14,15] and CdTe (≈40 GPa), [16,17] and their structure has been reported to be prone to light-induced, electric-fieldinduced, and temperature-dependent rearrangements. With a Young's modulus around 20 GPa, [7][8][9][10] perovskites are mechanically softer than most other PV materials such as silicon (>160 GPa), [11,12] GaAs (≈85 GPa), [13] CIGS (≈80 GPa), [14,15] and CdTe (≈40 GPa), [16,17] and their structure has been reported to be prone to light-induced, electric-fieldinduced, and temperature-dependent rearrangements.

…”

mentioning

confidence: 99%

“…The dramatic gain in solar cell device efficiency since 2012 is only one of the features making perovskites stand out among other photovoltaic materials. With a Young's modulus around 20 GPa, perovskites are mechanically softer than most other PV materials such as silicon (>160 GPa), GaAs (≈85 GPa), CIGS (≈80 GPa), and CdTe (≈40 GPa), and their structure has been reported to be prone to light‐induced, electric‐field‐induced, and temperature‐dependent rearrangements . The workhorse system studied to date, methylammonium lead iodide (MAPbI 3 ), is in a tetragonal phase (TP) at room temperature, but undergoes a transition to a cubic phase at high temperature (≈330 K) and an orthorhombic phase (OP) at low temperature (≈150 K).…”

mentioning

confidence: 99%

Influence of Grain Size on Phase Transitions in Halide Perovskite Films

Stavrakas

Zelewski

Frohna

et al. 2019

Advanced Energy Materials

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toward the optimization of perovskite thin film growth from simple precursors have improved the efficiency and stability of devices to a high quality standard and low cost, placing them on the verge of commercialization. [1][2][3][4][5][6] Nevertheless, a better understanding of what influences their crystalline structure is needed in order to achieve phase purity, manage defects, and ultimately achieve optimal device performances.The dramatic gain in solar cell device efficiency since 2012 is only one of the features making perovskites stand out among other photovoltaic materials. With a Young's modulus around 20 GPa, [7][8][9][10] perovskites are mechanically softer than most other PV materials such as silicon (>160 GPa), [11,12] GaAs (≈85 GPa), [13] CIGS (≈80 GPa), [14,15] and CdTe (≈40 GPa), [16,17] and their structure has been reported to be prone to light-induced, electric-fieldinduced, and temperature-dependent rearrangements. [18][19][20][21][22][23] The workhorse system studied to date, methylammonium lead iodide (MAPbI 3 ), is in a tetragonal phase (TP) at room temperature, but undergoes a transition to a cubic phase at high temperature (≈330 K) and an orthorhombic phase (OP) at low temperature (≈150 K). Recently, we and others [24][25][26] have reported that the structural rearrangement from TP to OP causes a distinct hysteretic change in optical and transport properties as well as device behavior between heating and cooling cycles. This hysteresis could be reduced by scraping the film from the substrate and instead measuring randomly oriented powder samples. [24] These results provide hints that the thermal stability [27] and phase transition can be influenced by the local environment of the film due to interactions between the material and substrate as well as within the bulk film itself. Unless understood and mitigated, such hysteretic changes at low temperature may limit the use of perovskite solar cells in some specific applications, for example, aerospace applications, which require operation at extremely low temperatures [28] (<200 K).State-of-the-art perovskite films are polycrystalline, which leads to microscale inhomogeneities in a number of properties such as morphology and defect distributions [29][30][31][32] and, in turn, to local variations in the electronic environment for charge carriers. Generally, increasing grain sizes in MAPbI 3 films has resulted in improvements in critical performance parameters, such as an increase in carrier mobility and charge collection efficiency, [33,34] along with smaller bandgaps, longer lifetimes, Grain size in polycrystalline halide perovskite films is known to have an impact on the optoelectronic properties of the films, but its influence on their soft structural properties and phase transitions is unclear. Here, temperature-dependent X-ray diffraction, absorption, and macro-and microphotoluminescence measurements are used to investigate the tetragonal to orthorhombic phase transition in thin methylammonium lead iodide films with grain sizes ranging fr...

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“…El agregado de Zn mejoró las propiedades mecánicas del material, al reemplazar el Cd al azar en ciertos lugares de la red. La contracción del parámetro de red en la unión Zn-Te hizo que sea más fuerte que la que corresponde al Cd-Te [8]. Por esta razón los materiales aleados con Zn (CZT) fueron más sencillos de pulir que los no aleados (CdTe).…”

Section: Microscopía Electrónica De Transmisiónunclassified

Propiedades físicas y cristalinas del Cd1-xZnxTe (0 ≤ x ≤ 1)

Martínez¹,

Aguirre

́Elía³

et al. 2018

Matéria (Rio J.)

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RESUMENEl Cd 1-x Zn x Te (0 ≤ x ≤ 1) y el ZnTe son semiconductores de la familia II-VI, que se usan en forma monocristalina porque así poseen mejores propiedades estructurales y eléctricas. El CZT y el ZnTe deben poseer alta calidad cristalina y eléctrica para ser usados, el primero en detectores de rayos X y γ, y como sustratos ordenadores de películas epitaxiales aptas para la detección de la radiación IR y el segundo para la fabricación de diodos láser y emisores de luz de alta intensidad, ambos casos en el verde.En este trabajo el CZT se sintetizó por el método de Bridgman, bajo un gradiente de temperatura de 10ºC/cm a velocidades de 1,66 mm/h y 3,22 mm/h para diferentes concentraciones de Zn. Por otro lado, el ZnTe se sintetizó por transporte físico en fase vapor bajo un gradiente de temperatura de 6ºC/cm a una velocidad de 6mm/día.Por medio de revelado químico y microscopía electrónica de transmisión convencional TEM y de alta resolución (HRTEM) se estudió la calidad cristalina de ambos materiales. Se observó que los lingotes de CZT tenían una densidad de dislocaciones promedio similar en todos los lingotes crecidos en ambas velocidades y para todas las concentraciones mientras que el ZnTe mostró una menor densidad de dislocaciones. Las micrografías de TEM mostraron en todos estos materiales un orden estructural importante. Estas características indicaron que la calidad cristalina del CZT y del ZnTe era adecuada para fabricar dispositivos optoelectrónicos.También se midió la Conductividad Eléctrica, Difusividad Térmica, Calor Específico y Coeficiente Seebeck en función de la temperatura en estos materiales. Se analizó la influencia de las propiedades estructurales en sus propiedades físicas con el objeto de determinar la relación con los defectos cristalinos observados.Palabras clave: semiconductores monocristalinos II-VI, revelado químico, propiedades físicas, HRTEM, LRTEM. ABSTRACTCd 1-x Zn x Te (0 ≤ x ≤ 1) and ZnTe are II-VI semiconductors, which are used in single crystalline structure to improve their crystalline and electrical properties. The CZT and ZnTe must possess high crystalline and electrical quality to be used, the first in x or γ-ray detectors, and as substrates for suitable epitaxial films for detecting IR radiation and the second for the manufacture of laser diodes and high intensity light emitters, both cases in the green wavelengths.

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Mechanical Properties Calculation of II-VI Semiconductors: Cd1-yZnyTe(0≤y≤1)

Cited by 8 publications

References 20 publications

Microstructural Analysis of AgIn5VI8 (VI: S, Se, Te) Ternary Semiconductors by X-Ray Diffraction

Microstructural Analysis of AgIn5VI8 (VI: S, Se, Te) Ternary Semiconductors by X-Ray Diffraction

Influence of Grain Size on Phase Transitions in Halide Perovskite Films

Propiedades físicas y cristalinas del Cd1-xZnxTe (0 ≤ x ≤ 1)

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