Mechanical properties and thermal stability of nanostructured thermoelectric materials on the basis of PbTe and GeTe

Shtern, M. Yu.; Шерченков, А. А.; Shtern, Yu. I.; Боргардт, Н. И.; Рогачев, М. С.; Yakubov, A. O.; Бабич, А. В.; Pepelyaev, D. V.; Voloshchuk, Irina A.; Zaytseva, Yuliya; Pereverzeva, Svetlana; Gerasimenko, Alexander Yu.; Potapov, D. A.; Murashko, Denis

doi:10.1016/j.jallcom.2023.169364

Cited by 15 publications

(1 citation statement)

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“…For example, Bu [17] obtained a zT value of 1.1 at room temperature by doping Pb into the GeTe matrix. Researchers have also studied the doping of many other elements, except for Pb because of its toxicity, such as Bi [18,19] or Sb [20,21], which can greatly reduce the carrier concentration of GeTe. Therefore, the thermoelectric performance of the composite is improved by increasing the Seebeck coefficient and decreasing the thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Guo,

Zhang,

Nan

et al. 2024

Materials

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GeTe and Ge0.99-xIn0.01SnxTe0.94Se0.06 (x = 0, 0.01, 0.03, and 0.06) samples were prepared by vacuum synthesis combined with spark plasma sintering (SPS). The thermoelectric properties of GeTe were coordinated by multiple doping of Sn, In, and Se. In this work, a maximum zT(zT = S2σT/κ) of 0.9 and a power factor (PF = S2σ) of 3.87 μWmm−1 K−2 were obtained in a sample of Ge0.99In0.01Te0.94Se0.06 at 723K. The XRD results at room temperature show that all samples are rhombohedral phase structures. There is a peak (~27°) of the Ge element in GeTe and the sample (x = 0), but it disappears after Sn doping, indicating that Sn doping can promote the dissolution of Ge. The scattering mechanism of the doped samples was calculated by the conductivity ratio method. The results show that phonon scattering Is dominant in all samples, and alloy scattering is enhanced with the increase in the Sn doping amount. In doping can introduce resonance energy levels and increase the Seebeck coefficient, and Se doping can introduce point defects to suppress phonon transmission and reduce lattice thermal conductivity. Therefore, the thermoelectric properties of samples with x = 0 improved. Although Sn doping will promote the dissolution of Ge precipitation, the phase transition of the samples near 580 K deteriorates the thermoelectric properties. The thermoelectric properties of Sn-doped samples improved only at room temperature to ~580 K compared with pure GeTe. The synergistic effect of multi-element doping is a comprehensive reflection of the interaction between elements rather than the sum of all the effects of single-element doping.

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