Mechanical modeling of the reticle and chuck for EUV lithography

Martin, Carl J.; Mikkelson, Andrew R.; Tejeda, R.; Engelstad, Roxann L.; Lovell, Edward G.; Blaedel, Kenneth L.; Claudet, Andre Aman

doi:10.1117/12.472290

Cited by 8 publications

(3 citation statements)

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“…Martin et al have modeled this case, which clearly shows that the specification of thermal expansion of the substrate material should take into account that the mask and its chuck are a system. 10 …”

Section: MMmentioning

confidence: 97%

Vendor capability for low-thermal-expansion mask substrates for EUV lithography

Blaedel

Taylor

Hector

et al. 2002

Emerging Lithographic Technologies VI

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Development of manufacturing infrastructure is required to ensure a commercial source of mask substrates for the timely introduction of EUVL. Improvements to the low thermal expansion materials that compose the substrate have been made, but need to be scaled to production quantities. We have been evaluating three challenging substrate characteristics to determine the state of the infrastructure for the finishing of substrates. First, surface roughness is on track and little risk is associated with achieving the roughness requirement as an independent specification. Second, with new flatnessmeasuring equipment just coming on line, the vendors are poised for improvement toward the SEMI P37 flatness specification. Third, significant acceleration is needed in the reduction of defect levels on substrates. The lack of highsensitivity defect metrology at the vendors' sites is limiting progress in developing substrates for EUVL.

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Section: MMmentioning

confidence: 97%

Vendor capability for low-thermal-expansion mask substrates for EUV lithography

Blaedel

Taylor

Hector

et al. 2002

Emerging Lithographic Technologies VI

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“…Low stress absorbers are being developed by Racette et al 52 A SEMI standard for mask mounting is being discussed to address this issue. Martin et al 53 have studied aspects of chuck design that might help guide standardization. One approach would be to standardize the properties of the chuck in each of the e-beam, metrology and exposure tool.…”

Section: Mask Pattern Placementmentioning

confidence: 99%

EUVL masks: requirements and potential solutions

Hector

2002

Emerging Lithographic Technologies VI

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Extreme ultraviolet lithography (EUVL) is a leading next generation lithography technology. Significant progress has been made in developing mask fabrication processes for EUVL. The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor that is coated with Mo/Si multilayers. A SEMI standard is now available for mask substrates. SEMI standards are also being developed for mask mounting, for mask blank multilayers and absorbers and for mask handling and storage. Several commercial suppliers are developing polishing processes for LTEM substrates, and they are progressing toward meeting the requirements for flatness, surface roughness, and defects defined in the SEMI standard.One of the challenges in implementing EUVL is to economically fabricate multilayer-coated mask blanks with no printable defects. Significant progress has been made in developing mask blank multilayer coating processes with low added defect density. Besides lowering added defect density, methods to reduce defect printability are being developed to effectively enable repair of many defect types. These repair processes might significantly increase yield of EUV mask blanks before defect density is lowered to production targets. Calculations of EUVL mask cost indicate that defect repair processes could allow the initial defect density targets for mask blanks to be relaxed.The mask patterning process for EUVL is nearly the same as that for conventional binary optical lithography masks. EUVL mask patterning efforts are focused on developing the EUV-specific aspects of the patterning process. Eight absorbers have been evaluated against the requirements for EUVL masks, and two absorbers-TaN and Cr--will probably meet the requirements after some further development.

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“…Although the previous studies have provided insight into the effects of fractal dimension, material properties, and surface adhesion on the loss of material by adhesive wear, the developed wear models are extensions of Archard's model and, therefore, can only be applied to sliding surfaces. However, experimental evidence (Martin et al, 2002) and molecular dynamics simulations (Bhushan et al, 1995) have shown that adhesive wear can occur even in the absence of relative slip between the contacting surfaces. Hence, a comprehensive adhesive wear theory of rough surfaces in normal contact is necessary to bridge this gap of knowledge.…”

Section: Introductionmentioning

confidence: 98%

An adhesive wear model of fractal surfaces in normal contact

Yin

Komvopoulos

2010

International Journal of Solids and Structures

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a b s t r a c tA generalized adhesive wear analysis that takes into account the effect of interfacial adhesion on the total load was developed for three-dimensional fractal surfaces in normal contact. A wear criterion based on the critical contact area for fully-plastic deformation of the asperity contacts was used to model the removal of material from the contact interface. The fraction of fully-plastic asperity contacts, wear rate, and wear coefficient are expressed in terms of the total normal load (global interference), fractal (topography) parameters, elastic-plastic material properties, surface energy, material compatibility, and interfacial adhesion characteristics controlled by the environment of the interacting surfaces. Numerical results are presented for representative ceramic-ceramic, ceramic-metallic, and metal-metal contact systems to illustrate the dependence of asperity plastic deformation, wear rate, and wear coefficient on global interference, surface roughness, material properties, and work of adhesion (affected by the material compatibility and the environment of the contacting surfaces). The analysis yields insight into the effects of surface material properties and interfacial adhesion on the adhesive wear of rough surfaces in normal contact.

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Mechanical modeling of the reticle and chuck for EUV lithography

Cited by 8 publications

References 0 publications

Vendor capability for low-thermal-expansion mask substrates for EUV lithography

Vendor capability for low-thermal-expansion mask substrates for EUV lithography

EUVL masks: requirements and potential solutions

An adhesive wear model of fractal surfaces in normal contact

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