Mechanical characterization of micro/nanoscale structures for MEMS/NEMS applications using nanoindentation techniques

Li, Xiaodong; Bhushan, Bharat; Takashima, Kazuki; Baek, Chang-Wook; Kim, Yong Kweon

doi:10.1016/s0304-3991(03)00077-9

Cited by 290 publications

(114 citation statements)

References 14 publications

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“…PECVD SiO 2 thin films usually exhibit a higher elastic modulus than thermally grown ones. 40 It can be seen from Fig. 4 that the elastic modulus of the amorphous SiO 2 nanowires is independent of the wire diameter in the range of 50-100 nm.…”

Section: Fig 3 ͑Color Online͒ ͑A͒mentioning

confidence: 86%

“…For all tested nanowires with a diameter ranging from 50 nm to 100 nm, the calculated elastic modulus ranged from 57 to 93 GPa and the average elastic modulus is 76.6± 7.2 GPa, which is close to the reported value of 73 GPa of thermally grown SiO 2 thin films 38 and the bulk SiO 2 , 39 but lower than that of plasma-enhanced CVD ͑PECVD͒ SiO 2 thin films. 40 For example, the highest reported elastic modulus of 144 GPa is from 1 m SiO 2 thin film deposited by PECVD. 40 This discrepancy is probably due to the different synthesis processes and different testing techniques.…”

Section: Fig 3 ͑Color Online͒ ͑A͒mentioning

confidence: 99%

“…40 For example, the highest reported elastic modulus of 144 GPa is from 1 m SiO 2 thin film deposited by PECVD. 40 This discrepancy is probably due to the different synthesis processes and different testing techniques. Normally, the quality and density of PECVD SiO 2 differ from thermally grown SiO 2 .…”

Section: Fig 3 ͑Color Online͒ ͑A͒mentioning

confidence: 99%

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Elastic modulus of amorphous SiO2 nanowires

Gao

2006

Applied Physics Letters

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146

106

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Amorphous SiO2 nanowires with diameter ranging from 50 to 100 nm were synthesized using chemical vapor deposition (CVD) under an argon atmosphere at atmospheric pressure. Nanoscale three-point bending tests were performed directly on individual amorphous SiO2 nanowires using an atomic force microscope (AFM). Elastic modulus of the amorphous SiO2 nanowires was measured to be 76.6±7.2GPa, which is close to the reported value of the bulk SiO2 and thermally grown SiO2 thin films, but lower than that of plasma-enhanced CVD SiO2 thin films. The amorphous SiO2 nanowires exhibit brittle fracture failure in bending.

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Section: Fig 3 ͑Color Online͒ ͑A͒mentioning

confidence: 86%

Section: Fig 3 ͑Color Online͒ ͑A͒mentioning

confidence: 99%

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Elastic modulus of amorphous SiO2 nanowires

Gao

2006

Applied Physics Letters

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146

106

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“…On the other hand, in the manufacturing processes and practical applications of micro/nanodevices, mechanical impact loading often occurs at the component surfaces/interfaces. 7,8 For instance, the actuating properties in the ferroelectric MEMS/NEMS are fundamentally based on the mechanical stress/strain behavior of ferroelectric materials. Such mechanical stress may cause domain switching and/or phase transition ͑symmetry change͒, 5,10 thereby inducing local stress and strain and then leading to malfunction or failure of the whole device.…”

Section: Introductionmentioning

confidence: 99%

Nanoindentation of the a and c domains in a tetragonal BaTiO3 single crystal

Park

Dicken

et al. 2007

Journal of Applied Physics

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Nanoindentation in conjunction with piezoresponse force microscopy was used to study domain switching and to measure the mechanical properties of individual ferroelectric domains in a tetragonal BaTiO 3 single crystal. It was found that nanoindentation has induced local domain switching; the a and c domains of BaTiO 3 have different elastic moduli but similar hardness. Nanoindentation modulus mapping on the a and c domains further confirmed such difference in elasticity. Finite element modeling was used to simulate the von Mises stress and plastic strain profiles of the indentations on both a and c domains, which introduces a much higher stress level than the critical value for domain nucleation.

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“…[29][30][31][32] The value of Young's modulus E can be measured by nanoindentation or micro tensile-test.…”

Section: B Mechanical Propertiesmentioning

confidence: 99%

Influence of adhesive rough surface contact on microswitches

Rochus

Noels

et al. 2009

Journal of Applied Physics

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Stiction is a major failure mode in microelectromechanical systems ͑MEMS͒. Undesirable stiction, which results from contact between surfaces, threatens the reliability of MEMS severely as it breaks the actuation function of MEMS switches, for example. Although it may be possible to avoid stiction by increasing restoring forces using high spring constants, it follows that the actuation voltage has also to be increased significantly, which reduces the efficiency. In our research, an electrostatic-structural analysis is performed to estimate the proper design range of the equivalent spring constant, which is the main factor of restoring force in MEMS switches. The upper limit of equivalent spring constant is evaluated based on the initial gap width, the dielectric thickness, and the expected actuation voltage. The lower limit is assessed on the value of adhesive forces between the two contacting rough surfaces. The MEMS devices studied here are assumed to work in a dry environment. In these operating conditions only the van der Waals forces have to be considered for adhesion. A statistical model is used to simulate the rough surface, and the Maugis's model is combined with Kim's expansion to calculate adhesive forces. In the resulting model, the critical value of the spring stiffness depends on the material and surface properties, such as the elastic modulus, surface energy, and surface roughness. The aim of this research is to propose simple rules for design purposes.

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Mechanical characterization of micro/nanoscale structures for MEMS/NEMS applications using nanoindentation techniques

Cited by 290 publications

References 14 publications

Elastic modulus of amorphous SiO2 nanowires

Elastic modulus of amorphous SiO2 nanowires

Nanoindentation of the a and c domains in a tetragonal BaTiO3 single crystal

Influence of adhesive rough surface contact on microswitches

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