Mechanical characterization of membrane like microelectronic components

Drık, M.; Löschner, H.; Haugeneder, E.; Fallman, W.; Hudek, P.; Rangelow, Ivo W.; Sarov, Y.; Lalinský, T.; Chlpík, Juraj

doi:10.1016/j.mee.2006.01.020

Cited by 5 publications

(3 citation statements)

References 5 publications

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“…Further analysis with Architect could be used to estimate the residual stress in the AlN. Previous work on modal frequencies in FBAR resonators [11,12] also showed that stress causes a shift in the resonant frequency of the device. Other effects on the normal mode frequencies in membrane structures include air loading (usually dominant in thin membranes [7]) and stiffness to bending and shearing (thick membranes).…”

Section: Discussionmentioning

confidence: 99%

Electrical and optical characterisation of aluminium nitride piezoelectric films on silicon nitride membranes

et al. 2011

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Aluminium nitride (AlN) is a thin film piezoelectric material having excellent potential for integration with microelectronic systems. We have investigated flexural modes of Si 3 N 4 membrane structures with and without an AlN active layer. AlN films typically 3 μm thick were deposited by RF sputtering. Mechanical excitation was provided acoustically by sweeping the excitation frequency of a 1 MHz air-coupled ultrasonic transducer. Mode shapes were verified by scanning laser vibrometry up to the [3,3] mode, in the frequency range 100 kHz to 1 MHz. Resonant frequencies were identified at the predicted values provided the tension in the layers could be estimated. For a membrane structure incorporating an AlN layer, acoustic and electrical excitation of flexural modes was confirmed by displacement measurements using laser vibrometry and resonant frequencies were compared with analytical calculations.

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Section: Discussionmentioning

confidence: 99%

Electrical and optical characterisation of aluminium nitride piezoelectric films on silicon nitride membranes

et al. 2011

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“…The resultant stress state has an important effect on the structural resonant frequencies and sensitivity of the diaphragm [11,12]. The residual stress determination using resonant and bulging method is a procedure developed a few years ago to investigate diaphragms [13][14][15]. AlGaN/GaN-based diaphragms were investigated previously using the micro-Raman technique [7,16].…”

Section: Introductionmentioning

confidence: 99%

Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor

Dzuba

Vanko

Držík

et al. 2014

J. Micromech. Microeng.

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In this paper, selected mechanical properties of a circular AlGaN/GaN diaphragm with an integrated circular high electron mobility transistor (HEMT) intended for pressure sensing are investigated. Two independent methods were used to determine the residual stress in the proposed diaphragms. The resonant frequency method using laser Doppler vibrometry (LDV) for vibration measurement was chosen to measure the natural frequencies while the diaphragms were excited by acoustic impulse. It is shown that resonant frequency is strongly dependent on the built-in residual stress. The finite element analysis (FEM) in Ansys software was performed to determine the stress value from frequency spectra measured. The transition behavior of proposed diaphragms between the ideal circular membrane and plate is observed and discussed. Secondly, the bulging method and white light interferometry (WLI) are used to determine the stress-dependent deflection response of the AlGaN/GaN diaphragm under static pressure loading. Regarding the results obtained, the optimal design of the sensing electrodes is outlined.

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“…It has been shown that the resonance frequency of a thin membrane depends on the stress in the membrane. The technique allows a comprehensive characterization of vibrating micro-membranes and can potentially accommodate nonstandard geometries and layered micro-membrane architectures where evolution of stress is of interest [6][7]. Main advantage of laser based methodology is contactless and non-destructive nature, thus even micro-size membranes can be monitored.…”

Section: Introductionmentioning

confidence: 99%

Modal Analysis of Gallium Nitride Membrane for Pressure Sensing Device

Dzuba

Držík

Vanko

et al. 2014

KEM

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A circular high electron mobility transistor (C-HEMT) prepared on the AlGaN/GaN membrane surface has been investigated and its potential for pressure sensing has been already demonstrated. The key issue in the design process of such heterostructure based MEMS sensors is the stress engineering. This way we can scale the sensor performance, measured pressure range and sensitivity. Especially, the knowledge of the exact value of the residual stress in membranes (caused by deposition process) helps us to optimize the sensing devices. In this work, the residual stress determination method in gallium nitride circular shaped membrane is reported. It is shown that resonant frequency method using Laser Doppler Vibrometry (LDV) for membrane vibration measurement seems to be an appropriate technique to determine the residual stress in micro-scale membranes. Circularly shaped AlGaN/GaN micro-membranes are excited by acoustic short time pulse. The decay oscillating motion of the membrane is recorded by oscilloscope. By FFT spectral analysis of the signals the resonance frequencies are obtained. For the sample studied, the natural frequency mode resonance peak is used to define the residual stress level. To verify the observed stress in investigated membranes, prestressed modal analysis in finite element method (FEM) code ANSYS is performed. The stress extracted from the measured frequency is taken as an initial stress state of the modelled membrane. Experimentally obtained shock spectra are compared with that computed by FEM simulation.

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Mechanical characterization of membrane like microelectronic components

Cited by 5 publications

References 5 publications

Electrical and optical characterisation of aluminium nitride piezoelectric films on silicon nitride membranes

Electrical and optical characterisation of aluminium nitride piezoelectric films on silicon nitride membranes

Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor

Modal Analysis of Gallium Nitride Membrane for Pressure Sensing Device

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