Mechanical characterization between room temperature and 1000 °C of SiC free-standing thin films by a novel high-temperature micro-tensile setup

Abstract

A novel high-temperature micro-tensile setup allows the characterization of the elastic and plastic as well as creep behavior of free-standing thin films at temperatures of up to 1000 °C. Correspondingly, a new layout for free-standing thin film tensile test structures has been developed, enabling accurate self-alignment upon loading. Furthermore, a differential optical strain measurement technique as well as optimizations of the optical path has been implemented, providing a strain resolution of well below 1 × 10(-4) at 1000 °C. Two different polycrystalline SiC free-standing thin films have been investigated in tension to acquire stress-strain data and corresponding Young's modulus at up to 1000 °C. The high sensitivity of the strain measurement technique makes it also possible to identify creep strains in the high-temperature regime.

Evaluating high temperature elastic modulus of ceramic coatings by relative method

“…10. [51] for CVD-SiC. For the relative three-point bending test results, the coating elastic modulus increased nearly linearly to 424.36 GPa at 500 ℃, and steadily reduced to 381.05 GPa at 1500 ℃.…”

“…10, i.e., the elastic modulus measured by this work increased at first and then decreased, whereas the modulus tested by Refs. [51][52][53] just decreased with the rise of temperature. This difference is most probably caused by the different sample conditions, i.e., the HT modulus are measured in situ in this work, but the free-standing SiC samples were required to be used in Refs.…”

“…Also the comparison among the measured temperaturemodulus profile and the other measurements [51][52][53][54] is showed in Fig. 10.…”

“…This difference is most probably caused by the different sample conditions, i.e., the HT modulus are measured in situ in this work, but the free-standing SiC samples were required to be used in Refs. [51][52][53]. The in situ measurements of the HT modulus of the SiC coatings are influenced by the thermal stress generated by the mismatch of the thermal expansion coefficients between the coating and substrate materials during the course of heating.…”

Robust Free‐Standing Nano‐Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications

“…[1][2][3][4][5] Silicon carbide finds applications in high power electronics (e.g., Schottky diode, transistors) and sensing devices including flame detection, gas sensing, thermal based sensors, and pressure sensors. [6][7][8][9] In addition, owing to the corrosive tolerance and mechanical robustness, SiC has also been utilized as a coating layer to improve the wear resistance of devices and instruments.…”