2002
DOI: 10.1016/s0921-5093(01)01550-7
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Mechanical characterisation of γ-TiAl thin films obtained by two different sputtering routes

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Cited by 15 publications
(7 citation statements)
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“…The transition between this enriched area and the rest of the interface is very diffuse, indicating that at this temperature the entire interface is composed of only one phase (g-TiAl). This conclusion is corroborated by studies [20] showing that Ti/Al multilayers with nanometric periods (less than 200 nm) heat treated at 600 C for 1 h evolve to g-TiAl; small amounts of a 2 -Ti 3 Al are found in some samples. Similar results have been obtained by Kim et al [21] whose research indicates that the crystallization of an amorphous Ti 53 Al 47 thin film starts at 500 C and g-TiAl þ a 2 -Ti 3 Al phases were formed during annealing at 600 C for 1 h. Tests at high processing temperatures and multilayers without the thicker superficial titanium layer were used trying to eliminate the porosity, lack of union and chemical heterogeneities present at the interface.…”
Section: Resultssupporting
confidence: 61%
“…The transition between this enriched area and the rest of the interface is very diffuse, indicating that at this temperature the entire interface is composed of only one phase (g-TiAl). This conclusion is corroborated by studies [20] showing that Ti/Al multilayers with nanometric periods (less than 200 nm) heat treated at 600 C for 1 h evolve to g-TiAl; small amounts of a 2 -Ti 3 Al are found in some samples. Similar results have been obtained by Kim et al [21] whose research indicates that the crystallization of an amorphous Ti 53 Al 47 thin film starts at 500 C and g-TiAl þ a 2 -Ti 3 Al phases were formed during annealing at 600 C for 1 h. Tests at high processing temperatures and multilayers without the thicker superficial titanium layer were used trying to eliminate the porosity, lack of union and chemical heterogeneities present at the interface.…”
Section: Resultssupporting
confidence: 61%
“…When using sputtering, titanium aluminide thin films have been manufactured by the use of different targets: (i) a target of an Al disk mounted on a Ti disk, (ii) one target of titanium and another of aluminum, (iii) the intermetallic target [130][131][132][133]. A part from the high temperature performance, the microstructure evolution [131][132][133], crystallization kinetics [133] and mechanical properties [130] have also been investigated. In some cases, a proper annealing treatment was necessary to achieve the target composition within the deposited film.…”
Section: Physical Vapor Depositionmentioning
confidence: 99%
“…So far, most studies on sputter-deposited Ti/Al thin films have been focused on their mechanical properties [9,10] and the thermal stability [11,12] at relatively high temperatures. However, the inter-diffusion and defects evolution in the films are of both basic and practical importance.…”
Section: Introductionmentioning
confidence: 99%