Mechanical Behavior of InP Twinning Superlattice Nanowires

Abstract

Taper-free InP twinning superlattice (TSL) nanowires with an average twin spacing of ~ 13 nm were grown along the zinc-blende close-packed [111] direction using metalorganic vapor phase epitaxy. The mechanical properties and fracture mechanisms of individual InP TSL nanowires in tension were ascertained by means of in situ uniaxial tensile tests in a transmission electron microscope. The elastic modulus, failure strain and tensile strength along the [111] direction were determined. No evidence of inelastic deformation mechanisms was found before fracture, which took place in a brittle manner along the twin boundary. The experimental results were supported by molecular dynamics simulations of the tensile deformation of the nanowires that also showed that the fracture of twinned nanowires occurred in the absence of inelastic deformation mechanisms by the propagation of a crack from the nanowire surface along the twin boundary. Fig. S1. 1 -8: Tensile sample preparation of TSL InP nanowires, and 9 -11: In situ mechanical testing of nanowires in a transmission electron microscope (TEM).

Compositional and structural engineering of inorganic nanowires toward advanced properties and applications

“…Chen et al reported that a high density of stacking faults in wurtzite GaAs nanowires resulted in an increased modulus, while Liu et al concluded that the opposite was true for WO 3 nanowires . In composition‐tunable alloy compounds, such as Si 1‐ x Ge x , the Young's modulus is presented as Y 110 = (169–31 x ) GPa along the [110] direction . The Young's modulus of Si 1‐ x Ge x [111] NWs was investigated through tensile stress measurements as a function of the Ge concentration with a mechanical testing system integrated on an SEM platform (Figure B) .…”

“…131 In compositiontunable alloy compounds, such as Si 1-x Ge x , the Young's modulus is presented as Y 110 = (169-31x) GPa along the [110] direction. 20 The Young's modulus of Si 1-x Ge x [111] NWs was investigated through tensile stress measurements as a function of the Ge concentration with a mechanical testing system integrated on an SEM platform ( Figure 9B). 134 As shown in Figure 9C, left, the Young's modulus gradually decreases with increasing Ge content, which indicates an approximately linear relation with the relative compositions of Si and Ge.…”

“…[1][2][3][4][5][6][7][8] Due to their abundant electrical, photonic, and mechanical properties, semiconductor nanowires, including Si, Ge, metal oxides, and III-V and II-VI compounds, have undergone great progress in the fields of electronics, subwavelength light waveguiding, and sensing (for photoelectric, chemical, and biological purposes). [9][10][11][12][13][14][15][16][17][18][19][20] Furthermore, more integrated devices with multifunctionalities have been investigated from both proof-of-concept and nanosystem integration perspectives. [21][22][23][24] Additionally, the nanowire configuration frequently exhibits reinforced mechanical properties compared to other configurations, including enhanced fracture resistance under bending (tensile) deformation and a tunable elastic modulus, making it advantageous for application in flexible devices and free-standing probes integrated with other functionalities.…”

“…For example, metallic NWs (Ag, Au, and Cu) have been considered as electrical interconnects, assembled transparent planar electrodes, and plasmonic propagation media . Due to their abundant electrical, photonic, and mechanical properties, semiconductor nanowires, including Si, Ge, metal oxides, and III‐V and II‐VI compounds, have undergone great progress in the fields of electronics, subwavelength light waveguiding, and sensing (for photoelectric, chemical, and biological purposes) . Furthermore, more integrated devices with multifunctionalities have been investigated from both proof‐of‐concept and nanosystem integration perspectives .…”

Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes

“…To simplify the process, alternative fabrication routes were actively explored based on nanomaterials such as bottom-up nanowires (NWs) [4][5][6][7][8][9][10][11][12][13]. NWs not only have remarkable optoelectronic properties, but they can also withstand high deformations without plastic relaxation [14,15]. These properties motivated the intense research of NW flexible LEDs [4,[8][9][10][11][12][13]16].…”