Mechanical behavior of cavity and dislocation evolution induced by interfacial debonding of Cu/SiC composites

Lu, Yuhang; Gao, Tinghong; Yan, Wanjun; Gao, Yue; Xie, Quan; Xiao, Qingquan; Qin, Xinmao

doi:10.1007/s10853-023-09326-1

Cited by 1 publication

(2 citation statements)

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“…The Tersoff 36 potential function was utilized to describe the interactions between atoms in the SiC wurtzite structure. 37 This function is a widely used equation for simulating covalent systems with complex structures and energy, applicable to silicon, carbon, germanium, and their compounds. The potential is expressed as follows…”

Section: Simulation Methods and Detailsmentioning

confidence: 99%

“…This model focuses on the accurate representation of twin boundaries, aiming to understand their role in the crystal growth process. The Tersoff potential function was utilized to describe the interactions between atoms in the SiC wurtzite structure . This function is a widely used equation for simulating covalent systems with complex structures and energy, applicable to silicon, carbon, germanium, and their compounds.…”

Section: Simulation Methods and Detailsmentioning

confidence: 99%

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Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations

Liu,

Gao,

Huang

et al. 2024

J. Phys. Chem. B

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Silicon carbide (SiC), a third-generation semiconductor material, is pivotal for applications in new energy vehicles, aerospace, and high-speed electronics, owing to its superior properties. This study delves into the twin-induced growth behaviors of SiC crystals through molecular dynamics simulations at temperatures ranging from 2700 to 3200 K. It focuses on the wurtzite and zinc blende SiC structures, revealing dynamic defect behavior during growth, including an initial rise and subsequent decrease in vacancies, with particular emphasis on prevalent defects within zinc blende twin layers. A significant finding is the direct correlation between temperature and growth rates across different SiC structures, highlighting temperature control as essential for optimizing crystal quality. Furthermore, this work contributes to the analysis of the interactions of twin layers and their impact on structural stability and defect formation in SiC crystals. The insights gained here have substantial implications for the semiconductor industry, potentially enhancing device performance by better controlling growth conditions and defect management in SiC-based electronic and optoelectronic devices.

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Section: Simulation Methods and Detailsmentioning

confidence: 99%

Section: Simulation Methods and Detailsmentioning

confidence: 99%