2006
DOI: 10.1063/1.2191475
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Measuring the role of surface chemistry in silicon microphotonics

Abstract: The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the gate oxide thickness of modern transistors is roughly 5 atomic layers, with 8 metal wire layers required to transport all the signals within a microprocessor. In addition to the increasing latency of such reduced-dimension metal wires, further "Moore's Law" scaling of transist… Show more

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Cited by 103 publications
(89 citation statements)
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“…Unfortunately, the benefits of tight optical confinement provided by high-index-contrast photonic elements have oftentimes been offset by increased optical losses due to high modal overlap with imperfect surfaces damaged by processing or imperfectly defined by lithography. As advances in the etching and definition of these structures have reduced geometrical nonidealities, absorption has become a significant source of optical loss [5]. Understanding the optical losses of these structures is important for continued progress in developing low-loss microphotonic circuits; as a result, many recent articles [5][6][7][8][9] have detailed methods for inferring the amount of optical loss due to absorption.…”
mentioning
confidence: 99%
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“…Unfortunately, the benefits of tight optical confinement provided by high-index-contrast photonic elements have oftentimes been offset by increased optical losses due to high modal overlap with imperfect surfaces damaged by processing or imperfectly defined by lithography. As advances in the etching and definition of these structures have reduced geometrical nonidealities, absorption has become a significant source of optical loss [5]. Understanding the optical losses of these structures is important for continued progress in developing low-loss microphotonic circuits; as a result, many recent articles [5][6][7][8][9] have detailed methods for inferring the amount of optical loss due to absorption.…”
mentioning
confidence: 99%
“…Details of the disk resonator fabrication process can be found in [5]. Device characterization was performed by using a tunable external-cavity laser ( 1420-1498 nm, linewidth Ͻ300 KHz for time scales relevant to this work) connected to a computercontrolled fiber taper waveguide probe [6] and two optical attenuators as in Fig.…”
mentioning
confidence: 99%
“…The cavities were then undercut using a 1:1 HF:H 2 O solution to remove the buried oxide layer, and cleaned using a piranha/HF cycle. The silicon surface was hydrogen-terminated with a weak 1:20 HF:H 2 O solution for chemical passivation [16].…”
mentioning
confidence: 99%
“…13 A 250 nm thick semiconductor disk with index n disk = 3.4 and radius R d = 0.65 m is simulated with a centered metal contact of varying radius ͑R m ͒. A schematic of the microdisk device is shown in Fig.…”
mentioning
confidence: 99%