Measuring the Radiation Energy Density of a Pulsed X-Ray Source

Akhmetshin, R.R.; Babichev, E.A.; Grigoriev, D.N.; Groshev, V.R.; Казанин, В. Ф.; Komarskiy, A. A.; Korzhenevskiy, S. R.; Romakhin, A. S.; Serednyakov, S. I.; Stavrietskiy, G. V.; Talyshev, A.; Timofeev, A. V.; Shtol, D.; Chepusov, A. S.

doi:10.1134/s0020441219020015

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2020

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“…Pulsed X-ray devices [1], in which high voltage pulses are formed due to a semiconductor opening switch (SOS) [2,3], are promising. Unlike gas dischargers, SOS can create generators with a repetition frequency of high-voltage pulses to a few MHz [4] with a pulse duration of about 10 -9 s and a peak power of 10 8 W. SOS-based pulsed X-ray sources have the following characteristics: the duration of X-ray pulses is about 30 ns, the pulse repetition frequency is up to 5 kHz, the maximum voltage is up to 500 kV, the pulse energy is from 0.2 to 5 J [5]. Typical design of the pulsed X-ray source is given in Fig.…”

Section: Introductionmentioning

confidence: 99%

X-ray sources of nanosecond pulses based on semiconductor opening switch for CT

Komarskiy

Korzhenevskiy

Komarov

2020

6th International Conference on X-Ray, Electrovacuum and Biomedical Technique

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This study describes the development of prototype CT scanners with 2 different pulsed X-ray sources. X-ray sources used in this work have a semiconductor opening switch. It is used to generate high voltage pulses and provides pulse repetition frequency up to 5 kHz. The work uses two pulsed X-ray sources, which have different peak voltages and pulse energies. Tomographic sections and 3D images for test objects are obtained, the advantages of pulsed X-ray sources compared to continuous sources are discussed.

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