Measuring the physical properties of nanostructures and nanowires by field emission

Purcell, Stephen T.; Vincent, P.; Journet, Catherine

doi:10.1051/epn:2006407

Cited by 3 publications

(1 citation statement)

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“…8 The drops were determined by the total energy distributions (TEDs) of the emitted electrons which, when combined with the measured total current, becomes a type of two point transport measurement. 13 In the saturation region, measured voltage drops along the NWs reached up to several hundreds of volts 11,12 and were T-dependent. These measurements allowed us to identify the carrier transport mechanisms 14 in our SiC NWs, which is difficult using only FN plots as measured by most authors (e.g.…”

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Field emission measure of the time response of individual semiconducting nanowires to laser excitation

Choueib

Ayari

Poncharal

et al. 2011

Applied Physics Letters

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International audienceA simple technique is explored to determine the temporal photo-response, s, of individual semiconducting SiC and Si nanowires (NWs), with a high time resolution. Laser-assisted field emission (LAFE) from the NWs is first shown to be highly sensitive to continuous laser illumination. Pulsed illumination is then combined with measurements of the total energy distributions to determine s which were rather large, 4-200 ls. The time response scaled roughly with the square of the NWs length and could be attributed to laser-induced heating. LAFE is thus a new tool for quantifying rapid thermo-optical effects in such nano-objects

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confidence: 99%