Measuring strain caused by ion implantation in GaN

Abstract

The reaction of GaN to ion implantation was studied in thin films grown on the a-plane (non-polar) and on the c-plane (polar). 300 keV argon ions were implanted at room temperature to fluences ranging from 5 × 10 12 atoms/cm 2 to 8 × 10 15 atoms/cm 2 . The structural analysis was performed using Rutherford Backscattering/Channeling and X-Ray Diffraction. The results allow to reinforce the suggestion that perpendicular strain caused by ion implantation is the driving force behind defect transformation processes inside the lattice. Furthermore, they confirm a lower relative defect level for a-GaN implanted with the highest fluence, in comparison with c-GaN, as reported previously for low temperature implantation.

Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films

“…The satellite peaks shifted towards lower 2θ angles, indicating that the vertical lattice strain gradually increased. [12] It can be observed that the increasing Tb 3þ injection dosage leads to a continuous enhancement of atomic interactions and an increase in compressive stress perpendicular to the sample surface, which is consistent with the results of Raman spectra.…”

“…Mendes et al demonstrated that increased vertical lattice strain can be identified by the offset of satellite peaks towards lower 2 θ angles. [ 12 ] In Figure 2d, satellite peaks appeared on the left side of the diffraction peak because of lattice damage caused by the Tb 3+ injection. The satellite peaks shifted towards lower 2 θ angles, indicating that the vertical lattice strain gradually increased.…”

Ion Implantation into Nonconventional GaN Structures

“…XRD allows for measuring the lattice parameters of crystals with very high resolution and is thus the technique of choice to assess strain induced by implantation defects. It is now commonly accepted that strain is one of the main driving forces for defect transformation from point defects to extended defects and eventually to amorphization [38,60,61]. Indeed, the results, presented in Section 3.1, showed that these defect transformations take place even at 15 K, suggesting that thermal effects are negligible, which agrees with the almost identical damage build-up curves at 15 K and room temperature [35].…”

MROX 2.0: a software tool to explore quantum heterostructures by combining X-ray reflectivity and diffraction

“…The MROX code, as recognized software for the simulation of X-ray diffraction measurements, was used in X-ray diffraction single reflection mode. 53–58 The simulations considered pseudomorphic growth, i.e. , the Ge in-plane lattice parameter equals the ones from the Si substrate and Si buffer layer.…”