2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 2012
DOI: 10.1109/pvsc-vol2.2012.6656785
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Measuring IV curves and subcell photocurrents in the presence of luminescent coupling

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Cited by 19 publications
(39 citation statements)
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“…Radiative coupling takes place when the light produced by a high bandgap junction due to radiative recombination is absorbed by a lower bandgap junction, contributing to its photocurrent and changing the operating point. It has been identified in numerous highly radiative materials such as quantum well solar cells and III-V MJ solar cells [62,63,64]. It appears as an artefact during the QE measurements of MJ solar cells [65], but it is also an effect that can be exploited to increase the performance of MJ devices [57] and their tolerance to spectral changes, resulting in superior annual energy yield [66].…”
Section: With Radiative Couplingmentioning
confidence: 99%
“…Radiative coupling takes place when the light produced by a high bandgap junction due to radiative recombination is absorbed by a lower bandgap junction, contributing to its photocurrent and changing the operating point. It has been identified in numerous highly radiative materials such as quantum well solar cells and III-V MJ solar cells [62,63,64]. It appears as an artefact during the QE measurements of MJ solar cells [65], but it is also an effect that can be exploited to increase the performance of MJ devices [57] and their tolerance to spectral changes, resulting in superior annual energy yield [66].…”
Section: With Radiative Couplingmentioning
confidence: 99%
“…This is in fact the origin of the measurement artifact of the EQE. As what occurs for the devices with low shunt resistance and luminescent coupling in one of the subcells, the true EQE without artifacts may be extracted from a linear combination of the EQE of the subcells measured [12]. If V bias is further increased, the BC is eventually taken out from the breakdown region and enters into the flat part of its I-V curve, becoming the limiting subcell (i.e., I MJSC = I BC sc ).…”
Section: Evolution Of the Measured Eqe In The Artifact Regionmentioning
confidence: 99%
“…This artifact consists of a lower than expected EQE of the subcell under test plus the simultaneous measurement of some response in Implications of low breakdown voltage on EQE of MJSC's E. Barrigón et al wavelengths corresponding to another subcell. The origin of the so-called measurement artifact has been thoroughly discussed in recent years and has been related to a variety of causes such as a low shunt resistance in any junction [8,9], luminescent coupling [10][11][12] or a combination of both [13]. In brief, these papers show that the EQE of a subcell is not only determined by its own properties but also by the electro-optical interactions with other subcells in the stack.…”
Section: Introductionmentioning
confidence: 99%
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“…Two tandem components of an IMM 3J solar cell have been analyzed: (1) GaInP/GaAs (lattice‐matched) and (2) GaAs/GaInAs (metamorphic) solar cells. We use the modeling and characterization techniques described in references to examine the LC, complemented by electroluminescence (EL) measurements and optical modeling to examine the performance of the device in the presence of LC and to determine the quality of the subcells .…”
Section: Introductionmentioning
confidence: 99%