Measuring Capacitor Parameters Using Vector Network Analyzers

Stepins, Deniss; Asmanis, G.; Asmanis, A.

doi:10.7251/els1418029s

Cited by 25 publications

(14 citation statements)

References 5 publications

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“…The measured initial gap is found to be more than the thickness of deposited sacrificial layer (t SiO 2~3 00 nm) due to bowing of the bridge under film-stress. The change in capacitance between the suspended bridge and the gate electrode as a function of actuation (emitter-gate) potential (V a ) is measured using a vector network analyzer [39][40][41] . The details of measurement setup are provided in the Supplementary Note 7.…”

Section: Resultsmentioning

confidence: 99%

Integrated near-field thermo-photovoltaics for heat recycling

et al. 2020

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Energy transferred via thermal radiation between two surfaces separated by nanometer distances can be much larger than the blackbody limit. However, realizing a scalable platform that utilizes this near-field energy exchange mechanism to generate electricity remains a challenge. Here, we present a fully integrated, reconfigurable and scalable platform operating in the near-field regime that performs controlled heat extraction and energy recycling. Our platform relies on an integrated nano-electromechanical system that enables precise positioning of a thermal emitter within nanometer distances from a room-temperature germanium photodetector to form a thermo-photovoltaic cell. We demonstrate over an order of magnitude enhancement of power generation (P gen~1 .25 μWcm −2) in our thermophotovoltaic cell by actively tuning the gap between a hot-emitter (T E~8 80 K) and the cold photodetector (T D~3 00 K) from~500 nm down to~100 nm. Our nanoelectromechanical system consumes negligible tuning power (P gen /P NEMS~1 0 4) and relies on scalable silicon-based process technologies.

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Section: Resultsmentioning

confidence: 99%

Integrated near-field thermo-photovoltaics for heat recycling

et al. 2020

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“…Capacitance measurements were obtained before and after the incubation of Cryptosporidium using a network analyzer (N5241A, Agilent Technologies, Santa Clara, CA, USA) connected to a coplanar waveguide probe which makes a calibrated impedance measurement referenced to the contact interface of the electrodes. S-parameter measurements [30] were performed ver a frequency range of 5.5 GHz to 8.5 GHz and converted to equivalent circuit capacitance values. The network analyzer was calibrated using the SOLT (short-open-load-through) method, and the S-parameter values were recorded at two different stages: (1) after SAM formation with immobilized anti- Cryptosporidium antibodies, and (2) after incubating the sensor with various concentrations of Cryptosporidium .…”

Section: Experimental Methodsmentioning

confidence: 99%

Label-Free Capacitive Biosensor for Detection of Cryptosporidium

Luka

Samiei

Dehghani

et al. 2019

Sensors

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Cryptosporidium, an intestinal protozoan pathogen, is one of the leading causes of diarrhea in healthy adults and death in children. Detection of Cryptosporidium oocysts has become a high priority to prevent potential outbreaks. In this paper, a label-free interdigitated-based capacitive biosensor has been introduced for the detection of Cryptosporidium oocysts in water samples. Specific anti-Cryptosporidium monoclonal antibodies (IgG3) were covalently immobilized onto interdigitated gold electrodes as the capture probes, and bovine serum albumin was used to avoid non-specific adsorption. The immobilization of the antibodies was confirmed by measuring the change in the contact angle. The detection was achieved by measuring the relative change in the capacitive/dielectric properties due to the formation of Cryptosporidium-antibody complex. The biosensor has been tested for different concentrations of Cryptosporidium. The results show that the biosensor developed can accurately distinguish different numbers of captured cells and densities on the surface of the biosensor. The number of Cryptosporidium oocysts captured on the electrode surface was confirmed using a fluorescein isothiocyanate (FITC) immunofluorescence assay. The response from the developed biosensor has been mainly dependent on the concentration of Cryptosporidium under optimized conditions. The biosensor showed a linear detection range between 15 and 153 cells/mm2 and a detection limit of 40 cells/mm2. The label-free capacitive biosensor developed has a great potential for detecting Cryptosporidium in environmental water samples. Furthermore, under optimized conditions, this label-free biosensor can be extended for detection of other biomarkers for biomedical and environmental analyses.

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“…However, the measurement error increases rapidly when the impedance differs from 50 Ohms. In order to perform accurate extraction of a low inductance over a wide frequency range, 2-port S-parameters techniques, such as Shunt-Thru and Series-Thru (in Figure 6b,c, respectively), are preferred to the 1-port measurement [28,29]. It has been shown that when the impedance value is below 50 Ω, the Shunt-Thru measurement demonstrates the best accuracy.…”

Section: S-parameter Measurement Techniquesmentioning

confidence: 99%

Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

et al. 2021

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Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power converters. Thus, the proper design of high-frequency converters in a simulation tool requires accurate electromagnetic (EM) modeling of the commutation loops. This work proposes an EM modeling of the parasitic inductance of a GaN-based commutation cell on a printed circuit board (PCB) using Advanced Design System (ADS®) software. Two different PCB designs of the commutation loop, lateral (single-sided) and vertical (double-sided) are characterized in terms of parasitic inductance contribution. An experimental approach based on S-parameters, the Cold FET technique and a specific calibration procedure is developed to obtain reference values for comparison with the proposed models. First, lateral and vertical PCB loop inductances are extracted. Then, the whole commutation loop inductances including the packaging of the GaN transistors are determined by developing an EM model of the device’s internal parasitic. The switching waveforms of the GaN transistors in a 1 MHz DC/DC converter are given for the different commutation loop designs. Finally, a discussion is proposed on the presented results and the development of advanced tools for high-frequency GaN-based power electronics design.

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Measuring Capacitor Parameters Using Vector Network Analyzers

Cited by 25 publications

References 5 publications

Integrated near-field thermo-photovoltaics for heat recycling

Integrated near-field thermo-photovoltaics for heat recycling

Label-Free Capacitive Biosensor for Detection of Cryptosporidium

Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

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