Measurements of the recombination velocity at germanium surfaces

Stevenson, Donald T.; Keyes, R. J.

doi:10.1016/s0031-8914(54)80229-1

Cited by 151 publications

(25 citation statements)

References 2 publications

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“…During this rising time, which takes a few ns and is determined by the motion of electrons and holes from and to the surface, 6 we consider an additional contribution to the SPV coming from the accumulation of charge in the surface states and *. 3,7 In the presence of contamination induced defects, the surface carrier dynamics changes drastically; as pointed out in a previous study, 15 the disruption of the two dimensional surface electronic structure increases the overlap between surface and bulk electronic states, making defects very efficient recombination centers and shortening the time scale necessary to reach the steady-state recombination condition. 14 Because of the excess of holes in the near surface region and of the proximity of to the valence band, during the transient regime, the excess charge is restored faster in than in *, and consequently Ͼ*.…”

mentioning

confidence: 82%

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Surface states and space charge layer dynamics on Si(111)2×1: A free electron laser-synchrotron radiation study

Marsi

Couprie

Nahon

et al. 1997

Applied Physics Letters

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Combining the use of a UV storage ring free electron laser and of synchrotron radiation, a time resolved core level spectroscopy study has been performed on photoexcited Si(111)2×1 surfaces with subnanosecond resolution. This enabled us to measure band bending fluctuations, caused by surface carrier dynamics, during the first nanosecond after photoexcitation; differences in the Si2p core level lineshape, dependent on the pump-probe time delay, were also observed. The presence of defects was found to reduce the fluctuations and make the carrier recombination process faster.

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mentioning

confidence: 82%

“…The latter can be well described by the Stevenson-Keyes model, 3 which allows to extract indirect information on surface recombination. This problem can be studied by measuring the surface photovoltage ͑SPV͒ produced by an optical excitation.…”

mentioning

confidence: 99%

Surface states and space charge layer dynamics on Si(111)2×1: A free electron laser-synchrotron radiation study

Marsi

Couprie

Nahon

et al. 1997

Applied Physics Letters

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“…15,16,18 The plot of sT/n 0 versus 1/kT is shown in Fig. 3 for CdTe and AO-passivated A CdTe Passivation Process for Long Wavelength Infrared HgCdTe Photo-Detectors 1227 …”

Section: Surface Recombination Processesmentioning

confidence: 99%

A CdTe passivation process for long wavelength infrared HgCdTe photo-detectors

Kumar

Pal

Chaudhury

et al. 2005

J. Electron. Mater.

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Passivant-Hg 1-x Cd x Te interface has been studied for the CdTe and anodic oxide (AO) passivants. The former passivation process yields five times lower surface recombination velocity than the latter process. Temperature dependence of surface recombination velocity of the CdTe/n-HgCdTe and AO/nHgCdTe interface is analyzed. Activation energy of the surface traps for CdTe and AO-passivated wafers are estimated to be in the range of 7-10 meV. These levels are understood to be arising from Hg vacancies at the HgCdTe surface. Fixed charge density for CdTe/n-HgCdTe interface measured by CV technique is 5 ϫ 10 10 cm Ϫ2 , which is comparable to the epitaxially grown CdTe films. An order of magnitude improvement in responsivity and a factor of 4 increase in specific detectivity (D*) is achieved by CdTe passivation over AO passivation. This study has been conducted on photoconductive detectors to qualify the CdTe passivation process, with an ultimate aim to use it for the passivation of p-on-n and n-on-p HgCdTe photodiodes.

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“…The effects of a spacecharge region on the surface recombination velocity were initially investigated by Stevenson and Keyes. 13 Grove has discussed this issue in detail and shows that the effective recombination velocity at the edge of a depletion region can be considerably enhanced by the band bending, assuming midgap recombination centers, where N d is the doping of wafer, n i is the intrinsic carrier concentration, and n s and p s are the carrier densities at the Si/SiO 2 interface. 14 For the present case, the EIS structure is biased by a potentiostat which maintains a state of inversion at the Si/SiO 2 interface.…”

Section: Analytical Modelmentioning

confidence: 99%

Determination of recombinative lifetime and surface recombination velocities from wavelength dependence of photocurrent in insulator-semiconductor structures

Mostarshed¹,

Darling

1996

Journal of Applied Physics

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A method is described for extracting bulk minority carrier lifetimes and surface recombination velocities from insulator-semiconductor structures. Recombination in the bulk and at the two surfaces of the wafer are distinguished by using the wavelength dependence of the penetration depth of the incident light flux. Pulse modulated light from various wavelength light-emitting diodes is used to create excess minority carrier holes which are collected in the depletion region of an inverted surface. The spectral dependence of the resulting photocurrents can then be used to determine the surface recombination velocities and the bulk lifetime. A model is described which provides relationships between the bulk minority carrier lifetime, the surface recombination velocities, the absorption coefficient of the incident light, and the resulting capacitive current. The experimental values of lifetime and surface recombination velocity are combined to obtain an effective lifetime which is in good agreement with a combined lifetime obtained from the photoconductive decay technique.

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Measurements of the recombination velocity at germanium surfaces

Cited by 151 publications

References 2 publications

Surface states and space charge layer dynamics on Si(111)2×1: A free electron laser-synchrotron radiation study

Surface states and space charge layer dynamics on Si(111)2×1: A free electron laser-synchrotron radiation study

A CdTe passivation process for long wavelength infrared HgCdTe photo-detectors

Determination of recombinative lifetime and surface recombination velocities from wavelength dependence of photocurrent in insulator-semiconductor structures

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