Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

Guo, Xiangyu; Pei, Dongfei; Zheng, Huifeng; King, Sean W.; Lin, Yu‐Min; Fung, H. S.; Chen, C.-C.; Nishi, Yoshio; Shohet, J. L.

doi:10.1063/1.4937582

Cited by 4 publications

(1 citation statement)

References 23 publications

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“…SiOC polymer‐derived ceramics (PDCs) have attracted enormous attention for years due to a variety of unique and superior properties, including excellent thermal stability in oxidative and corrosive environments, high strength and creep resistance, and unusual electric behavior . However, fabrication of porous SiOC in a stable shape poses considerable challenge due to the difficulties of keeping the materials undamaged during drying and pyrolysis.…”

Section: Introductionmentioning

confidence: 99%

Structure and energetics of SiOC and SiOC‐modified carbon‐bonded carbon fiber composites

et al. 2017

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The incorporation of SiOC polymer-derived ceramics into porous carbon materials could provide tailored shapeable, mechanical, electrical, and oxidation-resistant properties for high-temperature applications. Understanding the thermodynamic and kinetic stability of such materials is crucial for their practical application. We report here the dependence of structures and energetics of SiOC and SiOC-modified carbon-bonded carbon fiber composites (CBCFs) on the pyrolysis temperature using spectroscopic methods and high-temperature oxide melt solution calorimetry. The results indicate that a SiOC ceramic pyrolyzed at 1200°C and 1600°C is energetically stable with respect to an isocompositional mixture of cristobalite, silicon carbide, and graphite by 4.9 and 10.3 kJ/mol, respectively, and more energetically stable than that pyrolyzed at 1450°C. Their thermodynamic stability is related to their structural evolution. SiOC-modified CBCFs become energetically less stable with increasing preparation temperature and concomitant increase in excess carbon content. K E Y W O R D S silicon oxycarbide, structure, thermodynamics

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Section: Introductionmentioning

confidence: 99%

Structure and energetics of SiOC and SiOC‐modified carbon‐bonded carbon fiber composites

et al. 2017

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Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability

Mutch

Pomorski

Bittel

et al. 2016

Microelectronics Reliability

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SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

Myers

Zhang

Huang³

et al. 2017

Applied Physics Letters

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Molecular structures at the surface and buried interface of an amorphous ultralow-k pSiCOH dielectric film were quantitatively characterized before and after reactive ion etching (RIE) and subsequent dielectric repair using sum frequency generation (SFG) vibrational spectroscopy and Auger electron spectroscopy. SFG results indicated that RIE treatment of the pSiCOH film resulted in a depletion of ∼66% of the surface methyl groups and changed the orientation of surface methyl groups from ∼47° to ∼40°. After a dielectric recovery process that followed the RIE treatment, the surface molecular structure was dominated by methyl groups with an orientation of ∼55° and the methyl surface coverage at the repaired surface was 271% relative to the pristine surface. Auger depth profiling indicated that the RIE treatment altered the top ∼25 nm of the film and that the dielectric recovery treatment repaired the top ∼9 nm of the film. Both SFG and Auger profiling results indicated that the buried SiCNH/pSiCOH interface was not affected by the RIE or the dielectric recovery process. Beyond characterizing low-k materials, the developed methodology is general and can be used to distinguish and characterize different molecular structures and elemental compositions at the surface, in the bulk, and at the buried interface of many different polymer or organic thin films.

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Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

Cited by 4 publications

References 23 publications

Structure and energetics of SiOC and SiOC‐modified carbon‐bonded carbon fiber composites

Structure and energetics of SiOC and SiOC‐modified carbon‐bonded carbon fiber composites

Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

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