Measurements of InGaAs metal–semiconductor–metal photodetectors under high-illumination conditions

Aliberti, Keith; Wraback, Michael; Stead, Michael; Newman, P. G.; Shen, Hua

doi:10.1063/1.1473235

Cited by 11 publications

(5 citation statements)

References 15 publications

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“…The parameters used for simulation are shown in the figures. Our simulation results matched those in [Krishnamurthy, 2000], [Aliberti, 2002]. …”

Section: 122simulation Resultssupporting

confidence: 79%

“…Fig 2-2 corresponded to the Fig 4 in [Krishnamurthy, 2000] and Fig 2-3 corresponded to Fig 1 in [Aliberti, 2002]. The parameters used for simulation are shown in the figures.…”

Section: 122simulation Resultsmentioning

confidence: 99%

“…To demonstrate the model we did simulation corresponding to the experiment data in reference [Krishnamurthy, 2000] and [Aliberti, 2002]. Fig 2-2 corresponded to the Fig 4 in [Krishnamurthy, 2000] and Fig 2-3 corresponded to Fig 1 in [Aliberti, 2002].…”

Section: 122simulation Resultsmentioning

confidence: 99%

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Opto-Electronic and Interconnects Hierarchical Design Automation System (OE-IDEAS)

Turowski¹,

Przekwas²,

Tramel³

et al. 2004

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“…The parameters used for simulation are shown in the figures. Our simulation results matched those in [Krishnamurthy, 2000], [Aliberti, 2002]. …”

Section: 122simulation Resultssupporting

confidence: 79%

“…Fig 2-2 corresponded to the Fig 4 in [Krishnamurthy, 2000] and Fig 2-3 corresponded to Fig 1 in [Aliberti, 2002]. The parameters used for simulation are shown in the figures.…”

Section: 122simulation Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Opto-Electronic and Interconnects Hierarchical Design Automation System (OE-IDEAS)

Turowski¹,

Przekwas²,

Tramel³

et al. 2004

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“…As the optical power was increased within the available range of our optical source, a slight increase in fall time was measured. This may be due to the field screening effect [6] for higher optical power.…”

Section: I-msm Characterizationmentioning

confidence: 96%

High-speed InGaAs thin film MSM photodetector characterization using a fiber-based electro-optic sampling system

et al. 2004

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As optoelectronic devices increase in speed, the measurement system used to characterize these devices must have sufficient bandwidth and minimum parasitic loading during test to accurately determine the intrinsic performance of the device under test. Conventional electrical measurement systems have an intrinsic bandwidth due to the available components for test and have parasitic loading due to direct electrical contact to the device under the test. Electro-optic sampling is an excellent measurement technique for characterizing ultra-fast devices because it has high bandwidth, is non-contact, is non-destructive, and relatively non-invasive. In this paper, an optical fiber-based electrooptic sampling system is designed and used for characterizing high speed InGaAs thin film MSM photodetectors. A fiber laser which is operating at λ=1556 nm was used for the sampling and excitation beam. Optical fibers were used to connect each component in the system for flexibility. InGaAs thin film MSM photodetectors were fabricated and characterized. InGaAs thin film MSM photodetectors were bonded onto a coplanar strip line deposited on a benzocyclobutene (BCB)-coated glass substrate for characterization. These thin film photodetectors show high speed operation combined with high responsivity and large detection area compared to P-i-N photodetectors operating at similar speeds.

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“…where E is optical pulse energy at the wavelength λ, h is the Planck constant, c, the velocity of the light in vacuum, r , the reflection coefficient, d, the thickness of the active layer of the MSM-PD, α , light absorption coefficient, U , external applied voltage, t, finger spacing and (Aliberti et al 2002;Li and Donaldson 2003) and thus it seems it can be used as simple design guidance for elaboration of high-speed MSM-PD's working at high energy levels of optical illumination. One may see that the most effective way to minimize the space-charge effects and to increase the dynamic range of the MSM-PD is an increase of the bias voltage.…”

Section: Analysis Of Detector Speed Of Responsementioning

confidence: 99%

Solar-blind MSM-photodetectors based on Al x Ga1-x N heterostructures

et al. 2007

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Solar-blind MSM photodetectors based on the AlGaN heterostructures have been fabricated and investigated. The influence of material properties on device parameters is discussed. Effect of different buffer layers on the detector performances has been examined. Detectors exhibit low dark currents and high sensitivity within the range of 250-290 nm. Effect of optical excitation energy on GaN-based MSM-detector performance is analyzed and discussed. At high excitation level the detector speed of response is limited by the field screening caused by the space-charge of the holes. The impulse response of GaN-based MSM-detector is compared favorably with GaAs MSM-device.

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Measurements of InGaAs metal–semiconductor–metal photodetectors under high-illumination conditions

Cited by 11 publications

References 15 publications

Opto-Electronic and Interconnects Hierarchical Design Automation System (OE-IDEAS)

Opto-Electronic and Interconnects Hierarchical Design Automation System (OE-IDEAS)

High-speed InGaAs thin film MSM photodetector characterization using a fiber-based electro-optic sampling system

Solar-blind MSM-photodetectors based on Al x Ga1-x N heterostructures

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