Measurements of a radiation hardened process: Harris AVLSIRA

Thomas, S.L.; French, M.; Seller, P.; Bouvier, S.; Hall, G.; Millmore, M.; Raymond, D. M.; Nygård, E.; Yoshioka, K.

doi:10.1016/0168-9002(94)91424-9

Cited by 11 publications

(3 citation statements)

References 2 publications

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“…There is a strong dependence on fabrication technology, but proprietary electronic processes hardened for operation in radiation environments exist and have been evaluated . For example, low noise amplifiers and transistors have been tested to 100 Mrad with very satisfactory results Seller et al 1994;Thomas et al 1994). It is now clear that this presents no obstacle to the construction of readout electronics operating in very hostile conditions.…”

Section: Radiation Damage To Siliconmentioning

confidence: 99%

Silicon pixel detectors for X-ray diffraction studies at synchrotron sources

Hall

1995

Quart. Rev. Biophys.

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Customized silicon diode detectors are widely used for elementary particle detection for their good spatial resolution. Silicon detectors are also excellent X-ray detectors in the energy range of interest for applications in synchrotron radiation experiments and, with small elements laid out in a two-dimensional array, may provide high performance imaging devices for future diffraction experiments. These pixel detectors are still in the development phase but some are already installed in experiments and within the next few years large area detectors with fast, two-dimensional readout are likely to be available for online acquisition of diffraction patterns. This article describes the technology of silicon pixel detectors and outlines the status of current developments and the performance which could be achieved in a realistic system, indicating the steps required to implement it.

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Section: Radiation Damage To Siliconmentioning

confidence: 99%

Silicon pixel detectors for X-ray diffraction studies at synchrotron sources

Hall

1995

Quart. Rev. Biophys.

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“…The active current feedback circuit principle presented in this paper provides a means of improving the speed performance of a transimpedance amplifier without sacrificing stability or noise, and is fully compatible with digital processes. This novel circuit technique is very compact and enables control of the transresistance gain over a large range (1)(2)(3)(4)(5)(6)(7)(8)(9)(10), via an external current, again without affecting amplifier stability. The amplifier architecture can accept a DC input connection with a leaky sensor, such as a silicon-strip detector, without its performance being impared.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the developement of front-end systems in radiationhard CMOS processes [8][9][10] for the future LHC detectors and advances in deep submicron CMOS technology require design circuit techniques increasingly compatible with digital CMOS processes. The active current feedback circuit principle presented in this paper provides a means of improving the speed performance of a transimpedance amplifier without sacrificing stability or noise, and is fully compatible with digital processes.…”

Section: Introductionmentioning

confidence: 99%

A transimpedance amplifier using a novel current mode feedback loop

Jarron

Anghinolfi

Delagne

et al. 1996

Nuclear Instruments and Methods in Physics Research Section A:

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We present a transimpedance amplifier stage based on a novel current mode feedback topology. This circuit employs NMOS and PMOS transistors exclusively and requires neither capacitor for stabilizing the transimpedance loop nor resistor for the transresistance feedback and transistor loading. This amplifier circuit is fully compatible with submicron digital CMOS processes. The active feedback network consists of two grounded-gate MOS devices which split the output current in both the feedback and output branches. The transresistance and the phase margin are adjustable through external DC signals. The measured rise time of the impulse response of the amplifier implemented in an industrial 0.7 µm CMOS process is 18 ns for a transresistance of 180 kΩ and 30 ns for a transresistance of 560 kΩ. The measured Equivalent Noise Charge (ENC) is 800 rms e -for an input capacitance of 20 pF with the transresistance adjusted to 560 kΩ.

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