Measurements and simulations of silicon carbide current-controlled transistors

Patrzyk, Joanna; Bisewski, D.

doi:10.23919/empc.2017.8346923

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2018

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“…This development trend also applies SiC-JFETs (Silicon Carbide Junction Field-Effect Transistors) often used in e.g. power electronics systems for generation and conversion of electrical energy [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of accuracy of SiC-JFET macromodel

Bargieł

Bisewski

2018

ITM Web Conf.

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In the paper, the results of experimental verification of the macromodel of UJN1208K JFET transistor made of silicon carbide fabricated by United Silicon Carbide, are presented. The macromodel form dedicated for PSPICE program is available on the manufacturer's website. The accuracy of the macromodel have been evaluated by comparison of selected calculated and measured static characteristics and C-V characteristics of the considered transistor. The influence of ambient temperature on the characteristics of the transistor has been evaluated, as well.

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Section: Introductionmentioning

confidence: 99%