Measurement Systemwith Hall and a Four Point Probes for Characterization of Semiconductors

Kinder, R.; Mikolášek, Miroslav; Donoval, D.; Kováč, J.; Tłaczała, M.

doi:10.2478/jeec-2012-0015

Cited by 17 publications

(15 citation statements)

References 6 publications

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“…This configuration consists of four independent electrical terminals where two terminals are used to apply current to the sample, and the other two terminals measure the resulting potential drop across the defined portion of the sample. In the technique of linear four-point probes all measurement tips are placed along a straight line and separated by a constant distance [28]. The Hall effect measurements were conducted in air, at room temperature.…”

Section: Sheet Resistance Measurement Of Pedot:pssmentioning

confidence: 99%

Building an Organic Solar Cell: Fundamental Procedures for Device Fabrication

et al. 2019

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This laboratory experiment is designed to train undergraduate students in the fundamental steps followed in engineering solution-processed organic solar cells and to offer insight on the operating principles of said device. Bulk heterojunction (BHJ) organic solar cells represent a photovoltaic architecture which has attracted a lot of attention due to its promising properties; moreover, this architecture, due to its low cost and potential, is continuously being investigated and improved. This paper is intended as a useful step-by-step guide for students and researchers to learn how to construct such a device. Another primary objective of this article is to highlight the importance of optimizing device performance through enhancing the optical, electrical, and morphological properties of the materials selected as building blocks. Once a completed organic solar cell is made, students will also learn how to investigate and assess its performance through a series of spectroscopic, electrical, and morphological characterization measurements.Energies 2019, 12, 2188 2 of 23 an electron transport layer or ETL (e.g., calcium) and a cathode (e.g., aluminum or silver). The feature that differentiates BHJ OSCs from the previously-developed bi-layer OSCs is the way that the electron donor and the electron acceptor are deposited. In the bi-layer structure the photoactive layer is structured by first depositing the donor polymer and then depositing the acceptor material. The active layer is "sandwiched" between the ETL and HTL. However, in a BHJ OSC, the electron donor and the electron acceptor materials are first mixed in a blend (diluted in the same solvent) before being deposited between the ETL and HTL.After the description of the fabrication process, the device characterization is also presented. Firstly, the photovoltaic performance was evaluated by measuring the current density-voltage (J-V) using the solar simulator, then external quantum efficiency (EQE) measurements were taken to re-confirm the J-V calculated parameters. The optical properties were assessed with absorbance measurement of the AL via UV-Vis spectroscopy. The morphology and roughness of the HTL and AL were also investigated using AFM. Lastly, charge carrier mobility measurements were carried out, namely hole and electron mobilities of the transporting layers. This part of the experiment aims to teach students and dispense the characterization methods implemented to assess the overall performance of an organic solar cell and to evaluate/realize the result of each measurement.The present manuscript presents in detail the process followed throughout the fabrication of a bulk heterojunction organic solar cell. The role of each material, the criteria with which each compound was chosen, what measurements were carried out to assess each material's suitability, and the overall electrical and optical performance of the completed device are presented. In the experiment outlined in this manuscript, students (a) followed the fabrication process step by step, becomi...

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Section: Sheet Resistance Measurement Of Pedot:pssmentioning

confidence: 99%

Building an Organic Solar Cell: Fundamental Procedures for Device Fabrication

et al. 2019

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“…The substrate temperature was maintained at 600 Morphology and structure of prepared samples were characterized by SEM JEOL 7500F and Raman spectroscopy (Renishaw InVia Reflex Raman spectrometer with the excitation wavelength of 325 and 442 nm and ISA Dilor-Jobin Yvon-Spex Labram confocal system with the excitation wavelength of 633 nm). Electrical properties were determined using 4-point resistivity and Hall method measurements described elsewhere [8]. To form ohmic contacts, BDD thin films were contacted with a 10 min vacuum annealed (10 −3 Pa, 425…”

Section: Experimental Partmentioning

confidence: 99%

Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

Marton¹,

Mikolášek²,

Bruncko

et al. 2015

Journal of Electrical Engineering

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Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.K e y w o r d s: boron doped diamond, zinc oxide, Raman spectroscopy, bipolar heterostructure, wide-bandgap

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“…TE yarıiletkenler çok küçük boyutlarda ve benzer görünüme sahip olduklarından, P-N tipinin gözle ve elle belirlenmesi mümkün olamamaktadır. Bu açıdan TE yarıiletken P-N tipinin hızlı ve güvenilir bir şekilde belirlenmesine yönelik yeni sistemlerin geliştirilmesine ihtiyaç duyulmuş ve zaman içerisinde Hot-Probe metodu [1]- [6], Hall-Effect metodu [7], [8], 4-point probe metodu [9], [10] gibi çeşitli metotlar geliştirilmiştir. Bu yöntemler içerisinde Seebeck etkisi prensibine dayanan Hot-Probe metodu, diğer metotlara göre daha pratik, hızlı ve kullanışlıdır [3], [5], [6].…”

Section: Introductionunclassified

The design multi-functional probe for determining the P-N electrical conductivity type of thermoelectric semiconductors

Dişlitaş¹,

Yanmaz²,

Ömer³

et al. 2019

Pamukkale J Eng Sci

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Bu çalışmada, termoelektrik (TE) yarıiletkenlerin P-N elektriksel iletkenlik tiplerinin belirlenmesi amacıyla, temelini Seebeck etkisine dayanan Hot-Probe metodunun oluşturduğu çok fonksiyonlu bir prob tasarlanmış ve gerçekleştirilmiştir. Tip belirleme işlemi, TE yarıiletkenin yüzeyleri arasında sıcaklık farkının (T) oluşturulmasıyla üretilen Seebeck geriliminin (termoemk) pozitif veya negatif genlikli olma durumuna göre yapılmaktadır. Geliştirilen prob sayesinde, hem sıcaklık farkının oluşturulmasına yönelik gerekli ısıtma hem de termoemk gerilimi ve sıcaklık ölçümü yapılabilmektedir. Deneysel çalışma sonuçlarına göre; geliştirilen prob ile termoemk ölçümlerinin 0-30 mV aralığında ± 0.1 mV doğrulukta, sıcaklık ölçümlerinin ise 0-75 C aralığında ± 1 C doğrulukta yapılabildiği anlaşılmıştır. Sonuç olarak, geliştirilen çok fonksiyonlu prob ile TE yarıiletkenlerin elektriksel iletkenlik tipleri P veya N olarak pratik, hızlı ve güvenilir bir şekilde belirlenebilmektedir. In this study, a multi-functional probe was designed and implemented to determine P-N electrical conductivity type of thermoelectric (TE) semiconductors according to Hot-Probe method based on the Seebeck effect. The type determination operation is performed according to the positive or negative amplitude of the Seebeck voltage (thermoemf) produced by forming the temperature difference (T) between the surfaces of the TE semiconductors. Using the developed probe it is possible to provide both necessary heating and measurement of the thermoemf voltage and temperature. As a result of experimental studies; it has been shown that the thermoemf measurements can be made in ± 0.1 mV accuracy in 0-30 mV range and the temperature measurements can be ± 1C in 0-75C range. In conclusion, with the developed multifunctional probe, electrical conductivity type of TE semiconductors can be determined as P or N practically, quickly and reliably.

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Measurement Systemwith Hall and a Four Point Probes for Characterization of Semiconductors

Cited by 17 publications

References 6 publications

Building an Organic Solar Cell: Fundamental Procedures for Device Fabrication

Building an Organic Solar Cell: Fundamental Procedures for Device Fabrication

Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

The design multi-functional probe for determining the P-N electrical conductivity type of thermoelectric semiconductors

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