A new type of semiconductor laser (patent pending) is demonstrated from optically-initiated current filaments in high gain photoconductive semiconductor switches (PCSS). The electron-hole plasma at the center of the current Jilaments in semi-insulating GaAs structures is used as the active region in optical cavities built around the filaments.Four device contgurations were fabricated and results from two configurations have shown Jive properties which demonstrate optical ampltjkation +om stimulated emission: high intensity, temporal pulse compression, spectral narrowing, light versus current thresholds, and low beam divergence. These miniature electronhole plasma based lasers are not limited in volume by the d@ksion length that limits one dimension of conventional, carrier-injected semiconductor lasers. Their comparatively larger diameters imply higher energies and reduced divergence in d@action-limited devices which are consistent with our "exploratory " results. Potential applications include active optical sensing and imaging, micro-machining, short pulse optical communication, and permanent optical memory.