This paper studied the low-field tunnel-type transport characteristics of polycrystalline and c-axis-oriented La 0.7 Pb 0.3 MnO 3 (LPMO) thin films. Polycrystalline thin films were fabricated on SiO 2 /Si(100) substrate (film A), on SiO 2 /Si substrate with yttria-stabilized zirconia (YSZ) buffer layer (film B), and on c-axisoriented thin film grown on LaAlO 3 (001) (LAO) single crystal substrate (film C) using the soft-chemical deposition method. A YSZ buffer layer acts as a barrier against inter-diffusion. As a result, it decreases the amount of dead layers generated from the interface and helps to produce qualitative films for application of magnetoresistive elements. The magnetoresistance (MR) ratio was 0.52%, 0.7%, and 0.4% for film A, film B, and film C under the applied field of 500 Oe at 300 K, respectively. The polycrystalline film had denser boundaries than the c-axis oriented film, i.e., the polycrystalline film gave more effective potential barrier regions than the c-axis oriented film.