Measurement of the Sheet Resistivity of a Square Wafer with a Square Four-Point Probe

Keywell, Frank; Dorosheski, George

doi:10.1063/1.1717065

Cited by 35 publications

(11 citation statements)

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“…This observation may be used in the assessment of the validity of this theory. Equation ( 9) is similar to some equations that have previously been derived for different conditions (Sun et al, 1992;Keywell and Dorosheski, 1960).…”

Section: J2%rhsupporting

confidence: 61%

Non‐destructive determination of the sheet resistance of conductive coating anodes on concrete

Glass

Field²,

Green³

2000

Anti-Corrosion Methods and Materials

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Section: J2%rhsupporting

confidence: 61%

Non‐destructive determination of the sheet resistance of conductive coating anodes on concrete

Glass

Field²,

Green³

2000

Anti-Corrosion Methods and Materials

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“…The sheet resistance R s (Ω per square) of the ALD ITO film deposited on 100 nm SiO 2 -Si substrate was determined by a four-point probe. The film resistivity was calculated by ρ (Ω cm) = R s × t, [40] where t is the film thickness obtained from XRR.…”

Section: Methodsmentioning

confidence: 99%

Atomic Layer Deposition of Indium‐Tin‐Oxide as Multifunctional Coatings on V₂O₅ Thin‐Film Model Electrode for Lithium‐Ion Batteries

Zhao

Nisula

Dhara

et al. 2020

Adv Materials Inter

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LIBs that provided an understanding of how ITO works in LIBs. There are three main ways ITO materials have been exploited-i) As an electrode protecting layer: [5] ITO coated on LiMn 2 O 4 (LMO) showed enhancement in the electrochemical performance when compared to pristine LMO. It is believed that the conductive ITO layer can reduce cell polarization, interparticle resistance, and charge-transfer resistance between LMO particles and the electrolyte solution. Furthermore, the ITO layer could suppress Mn dissolution as well. ii) As a current collector: [6] The electronic conductivity of ITO makes it comparable to the commonly used current collector such as Cu, Pt, and TiN. Additionally, oxidation, a major issue for TiN and Cu current collectors, does not occur in ITO as the ions involved are already in the highest oxidation state (In 3+ and Sn 4+). This makes ITO a promising candidate to serve as a current collector especially suitable for potentially high temperature conditions. iii) As an anode: [7] In 2 O 3 and SnO 2 are electrochemically active toward lithium at the potential range of 0-3 V (vs Li + /Li) with high theoretical capacities (In 2 O 3 578 mAh g −1 , SnO 2 782 mAh g −1). Based on this background, it is believed that ITO can also be exploited as a potential anode material for LIBs. Several deposition techniques are reported to obtain ITO thin-films including spray pyrolysis, [8] sol-gel methods, [9] pulsed laser deposition, [10] e-beam evaporation, [11] physical vapor deposition, [12] chemical vapor deposition, [13] and atomic layer deposition (ALD). [14] Among these methods, ALD is a thin-film deposition technique that is based on alternating, self-limiting chemical reactions between gaseous precursors and a solid surface to produce high quality, uniform and conformal coatings even at low growth temperatures. [15] The ALD method enables precise control over the thickness, composition, and structure (such as intermixed or laminated structure) of the films and allows for conformal coatings to be applied on all exposed complex surfaces, such as 3D silicon micropillars, [16] 3D anodic aluminum oxide, [17] aerogel, [18] and mesoporous membranes. [19] The preparation of ITO thinfilms via the ALD method was reported in several previous This work demonstrates the possible usages of indium tin oxide (ITO) thin-films as multifunctional coatings on V 2 O 5 model electrodes for lithium-ion batteries (LIBs). The thin films are produced with the atomic layer deposition (ALD) method via adjusting the ratio of In 2 O 3 and SnO 2 sub-layers to a well-controlled In: Sn contents. The highest conductivity value (7.37 × 10 −4 Ω cm) of as-grown ITO film is obtained from the sample containing 5% SnO 2 of overall ALD cycles. The ITO thin-films are further investigated as multifunctional coatings on ALD V 2 O 5 electrodes for LIBs: At first, dual electronic and ionic conductive protecting properties of ITO layer are explored to attenuate the fading of the battery capacity by improving the cycling stability. Second, the feasi...

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“…An early attempt to solve this problem [90] was incorrect because the solution does not approach the van der Pauw [91] solution for the case where the probes are on the periphery of the specimen.…”

Section: Square Array Collector Resistormentioning

confidence: 99%

Semiconductor measurement technology

Bullis¹

1977

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Measurement of the Sheet Resistivity of a Square Wafer with a Square Four-Point Probe

Cited by 35 publications

References 1 publication

Non‐destructive determination of the sheet resistance of conductive coating anodes on concrete

Non‐destructive determination of the sheet resistance of conductive coating anodes on concrete

Atomic Layer Deposition of Indium‐Tin‐Oxide as Multifunctional Coatings on V₂O₅ Thin‐Film Model Electrode for Lithium‐Ion Batteries

Semiconductor measurement technology

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Measurement of the Sheet Resistivity of a Square Wafer with a Square Four-Point Probe

Cited by 35 publications

References 1 publication

Non‐destructive determination of the sheet resistance of conductive coating anodes on concrete

Non‐destructive determination of the sheet resistance of conductive coating anodes on concrete

Atomic Layer Deposition of Indium‐Tin‐Oxide as Multifunctional Coatings on V2O5 Thin‐Film Model Electrode for Lithium‐Ion Batteries

Semiconductor measurement technology

Contact Info

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Atomic Layer Deposition of Indium‐Tin‐Oxide as Multifunctional Coatings on V₂O₅ Thin‐Film Model Electrode for Lithium‐Ion Batteries