“…17 The electronic oscillator strengths for the A 1 Π-X 1 Σ + transition in SiO have been determined from shock tube and laser beam studies. 55,61,62 The present calculations show that the A 1 Π-D 1 ∆ transition is considerably weak. The partial lifetime of A 1 Π for this transition is of the order of 10 -4 s. This particular transition does not alter the total lifetime of the A 1 Π state.…”
Section: Transition Properties and Radiative Lifetimes Of Uppermentioning
confidence: 59%
“…These authors have used the shapes of the experimental potential curves of A 1 Π and X 1 Σ + carried out by Deutsch et al and Barrow and Stone . The electronic oscillator strengths for the A 1 Π−X 1 Σ + transition in SiO have been determined from shock tube and laser beam studies. ,, 3 (a) Transition moment curves of six singlet−singlet and triplet−triplet transitions involving Λ-S states of SiO. (b) Transition moment curves of two transitions involving Ω components of SiO.…”
The electronic spectrum of the silicon monoxide molecule has been studied theoretically by using ab initiobased multireference singles and doubles configuration interaction calculations, which include the effective core potentials of the atoms. Potential energy curves of all 18 states, which correlate with the lowest dissociation limit Si( 3 P g ) + O( 3 P g ), are constructed. Spectroscopic parameters, namely, T e , r e , and ω e of a large number of bound Λ-S states of the molecule, are estimated and compared with the available experimental and other theoretical data. In addition, dissociation energies and dipole moments of the ground and some excited states are computed. The changes in the spectroscopic properties and potential energy curves after the inclusion of the spin-orbit coupling are discussed. Transition probabilities of many dipole-allowed and spin forbidden transitions are reported. The radiative lifetimes of some of the excited states such as A 1 Π, E 1 Σ + , and 2 1 Π are estimated and compared with the experimental results. Dipole moments (µ) and dipole derivatives (∂µ/∂r) of the molecule in X 1 Σ + , a 3 Σ + , b 3 Π, A 1 Π, and E 1 Σ + states as a function of the bond distance have been computed.
“…17 The electronic oscillator strengths for the A 1 Π-X 1 Σ + transition in SiO have been determined from shock tube and laser beam studies. 55,61,62 The present calculations show that the A 1 Π-D 1 ∆ transition is considerably weak. The partial lifetime of A 1 Π for this transition is of the order of 10 -4 s. This particular transition does not alter the total lifetime of the A 1 Π state.…”
Section: Transition Properties and Radiative Lifetimes Of Uppermentioning
confidence: 59%
“…These authors have used the shapes of the experimental potential curves of A 1 Π and X 1 Σ + carried out by Deutsch et al and Barrow and Stone . The electronic oscillator strengths for the A 1 Π−X 1 Σ + transition in SiO have been determined from shock tube and laser beam studies. ,, 3 (a) Transition moment curves of six singlet−singlet and triplet−triplet transitions involving Λ-S states of SiO. (b) Transition moment curves of two transitions involving Ω components of SiO.…”
The electronic spectrum of the silicon monoxide molecule has been studied theoretically by using ab initiobased multireference singles and doubles configuration interaction calculations, which include the effective core potentials of the atoms. Potential energy curves of all 18 states, which correlate with the lowest dissociation limit Si( 3 P g ) + O( 3 P g ), are constructed. Spectroscopic parameters, namely, T e , r e , and ω e of a large number of bound Λ-S states of the molecule, are estimated and compared with the available experimental and other theoretical data. In addition, dissociation energies and dipole moments of the ground and some excited states are computed. The changes in the spectroscopic properties and potential energy curves after the inclusion of the spin-orbit coupling are discussed. Transition probabilities of many dipole-allowed and spin forbidden transitions are reported. The radiative lifetimes of some of the excited states such as A 1 Π, E 1 Σ + , and 2 1 Π are estimated and compared with the experimental results. Dipole moments (µ) and dipole derivatives (∂µ/∂r) of the molecule in X 1 Σ + , a 3 Σ + , b 3 Π, A 1 Π, and E 1 Σ + states as a function of the bond distance have been computed.
“…The spectroscopic properties of the SiO molecule have been studied for at least the past three decades. Such studies were motivated for the first time mainly by two different applications: astrophysical [1][2][3][4][5][6] and entry physics studies [7,8]. The A 1 -X 1 + electronic band was investigated with great interest because it is the only strong band system of SiO in the wavelength range accessible with a non-vacuum equipped instrument.…”
UV emission of silicon oxide molecules observed from a non-thermal atmospheric pulsed dielectric barrier discharge was experimentally explored in a spectral range from 228 to 253 nm. The main vibrational bands (1, 1), (2, 2) and (0, 1) of A 1Π–X 1Σ+ electronic transition were investigated. Corresponding synthetic spectra was built up and adjusted with good agreement. Excitation temperatures (Tvib, Trot) were deduced as a function of gas composition. It is shown that the rotational temperature can represent a non-intrusive diagnostic of plasma gas temperature in process control.
“…Such studies were motivated for the first time mainly by two different applications: astrophysical [1][2][3][4][5][6] and entry physics studies [7,8]. The A 1 -X 1 + electronic band was investigated with great interest because it is the only strong band system of SiO in the wavelength range accessible with a non-vacuum equipped instrument.…”
UV emission of silicon oxide molecules observed from a non-thermal atmospheric pulsed dielectric barrier discharge was experimentally explored in a spectral range from 228 to 253 nm. The main vibrational bands (1, 1), (2, 2) and (0, 1) of A 1 -X 1 + electronic transition were investigated. Corresponding synthetic spectra was built up and adjusted with good agreement. Excitation temperatures (T vib , T rot ) were deduced as a function of gas composition. It is shown that the rotational temperature can represent a non-intrusive diagnostic of plasma gas temperature in process control.
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