2006
DOI: 10.1007/s11018-006-0267-5
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Measurement of the noise parameters of semiconductor devices

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Cited by 5 publications
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“…Capacitance and noise spectroscopy methods were used to study the dielectric and noise characteristics of test film structures. [19,20].…”
Section: Characterizationmentioning
confidence: 99%
“…Capacitance and noise spectroscopy methods were used to study the dielectric and noise characteristics of test film structures. [19,20].…”
Section: Characterizationmentioning
confidence: 99%
“…In this regard, the methods of indirect determination of the crystal temperature of the device, based on the control of temperature-dependent parameters (TDP) inherent in the device under test, are actively used. The direct current voltage drop on the TJ p-n junction, the transconductance of the transistor S, reverse current (IRR) and the characteristics of the reverse pn junction recovery process (tRR, IRR,max), signal delay-propagation time tD [12][13][14] are usually used as IC TDP. When choosing a TDP HFPVC circuits, the following conclusions can be made.…”
Section: Literature Reviewmentioning
confidence: 99%