Measurement of the monovacancy formation enthalpy in copper

Berger, Arnold S.; Ockers, S. T.; Siegel, Richard W.

doi:10.1088/0305-4608/9/6/009

Cited by 52 publications

(10 citation statements)

References 18 publications

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“…From the variation of the values presented in Refs. [39,[41][42][43][44]55], our calculated energy barriers also could be slightly inaccurate by several percent. Such small inaccuracies might have induced an overestimated calculated time by one or two orders of difference to achieve the profile presented by the blue-filled triangles in Fig.…”

Section: Discussionmentioning

confidence: 86%

“…The mobility of vacancies is characterized by the migration energy. The reported experimental values of migration energy in the bulk region are in the range between 0.76 ± 0.04 and 0.91 ± 0.05 eV [39][40][41][42]. Near the surface, vacancy migration energy can differ from the bulk value by 0.05 eV as shown in the calculation in Ref.…”

Section: Factors That Determine Co Distribution In Cu(001)mentioning

confidence: 89%

“…In the bulk region, the reported experimental values of vacancy formation energy range from 1.17 ± 0.11 to 1.30 ± 0.05 eV [39][40][41][42]. This means the vacancy concentration in the deep bulk is less than 10 −9 .…”

Section: Factors That Determine Co Distribution In Cu(001)mentioning

confidence: 99%

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Co diffusion in the near-surface region of Cu

et al. 2016

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We present our experimental and theoretical study on Co diffusion in the first few atomic layers of Cu(001). While the diffusion of Co atoms in Cu(001) is usually expected to be intense at a temperature T 800 K, in the vicinity of the surface, it is already activated at a considerably lower temperature T ∼ 650 K whereas the diffusion in the deep bulk region is still inhibited. This intense near-surface diffusion provides an accumulation of Co atoms in the first six atomic layers upon a single stage Co deposition. The details of the near-surface diffusion are studied by analyzing the distribution of the location depth of the buried single Co atoms. The depth of location of single Co atoms is deduced from scanning tunneling microscopy (STM) data. The subsurface Co atoms induce a perturbation of the electron density of states of the surface which is observable as apparent ringlike ripples in the STM images of the atomically flat Cu surface. The depth of location of the buried Co atoms is determined from the diameter of those rings. The largest amount of Co atoms is found to be in the third layer, emphasizing that the near-surface diffusion should be described by diffusion parameters different from those for bulk diffusion. A model that describes the embedding process of Co atoms into Cu(001) layers is developed. The model assumes Co atoms to diffuse via the vacancy and ring-exchange mechanisms. The energy barriers for the interlayer Co diffusion via those mechanisms are calculated using the nudged elastic band method. The model satisfactorily explains the experimental results. Our study reveals that the energy barriers for Co diffusion in the first five atomic layers of Cu(001) are lower than those in the bulk. This defines the region in which Co diffusion should be considered as a near-surface one.

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Section: Discussionmentioning

confidence: 86%

Section: Factors That Determine Co Distribution In Cu(001)mentioning

confidence: 89%

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Co diffusion in the near-surface region of Cu

et al. 2016

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“…(6). The activation enthalpies for the lattice self-diffusion in copper lie in the range of 196.8-205.7 kJ/mol [27][28][29]. With n in the range 7-8 for ETP copper [6] and 4-6 for OFP copper [30], the evaluated activation energy 23.1 kJ/mol as well as 31.1 kJ/mol correspondently yields a Q S that is quite close to the value for lattice self-diffusion.…”

Section: Flow Kineticsmentioning

confidence: 99%

Steady non-Newtonian flows in copper and iron aluminide at elevated temperatures

Jin

Sandström

2007

Journal of Materials Processing Technology

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“…In order to achieve a large enough range to examine plots of against 1/T for possible curvature, different sets can be combined (Sahu et a1 1978, Berger et al 1979. The changes in (Ap,)Q resulting from an incorrect choice of paAm are shown in figure 2(b), and it is clear that errors from size-effect corrections can create a problem in the concatenation of different sets of data.…”

Section: The Effect Of the Choice Of Pm 1 On (Ap)~mentioning

confidence: 99%

Parametric conversion of infrared radiation in an AgGaS₂crystal

Andreev¹,

Matveev²,

Nekrasov³

et al. 1977

Sov. J. Quantum Electron.

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Measurements of quenched-in resistivity ( A p O b s )~ as a function of temperature canyield values of the effective enthalpy for vacancy defect formation H:m. The samples are usually made thin to achieve high quenching rates and pure to avoid vacancy-impurity clustering during the quench. The higher the sample purity and the thinner the sample. the more the sample resistance is affected by scattering of electrons from the sample surface. Inadequate correction for this size effect can result in errors in the values of ApQ and thus H:r. The magnitude of the errors using Fuchs-Sondheimer and Dingle theories is discussed. A possible method of obtaining reliable size-effect corrections is suggested by an application of Soffer theory.

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Measurement of the monovacancy formation enthalpy in copper

Cited by 52 publications

References 18 publications

Co diffusion in the near-surface region of Cu

Co diffusion in the near-surface region of Cu

Steady non-Newtonian flows in copper and iron aluminide at elevated temperatures

Parametric conversion of infrared radiation in an AgGaS₂crystal

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Measurement of the monovacancy formation enthalpy in copper

Cited by 52 publications

References 18 publications

Co diffusion in the near-surface region of Cu

Co diffusion in the near-surface region of Cu

Steady non-Newtonian flows in copper and iron aluminide at elevated temperatures

Parametric conversion of infrared radiation in an AgGaS2crystal

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Parametric conversion of infrared radiation in an AgGaS₂crystal