Measurement of the Low-temperature Loss Tangent of High-resistivity Silicon with a High Q-factor Superconducting Resonator

Checchin, Mattia; Frolov, Daniil; Lunin, A.; Romanenko, Alexander

doi:10.48550/arxiv.2108.08894

Cited by 4 publications

(4 citation statements)

References 16 publications

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“…Recent experiments have indeed demonstrated how these very-high-quality-factor resonators offer e.g. mi-crowave characterization environments of uniquely high sensitivity, allowing one to study, with great precision, the loss tangents of various materials for quantum devices, including dielectrics such as silicon and sapphire [133]. In the area of quantum sensing, important applications include the search for dark sector particles such as dark matter and dark photons [121,134].…”

Section: Niobium Resonatorsmentioning

confidence: 99%

Materials and devices for fundamental quantum science and quantum technologies

Polini¹,

Giazotto²,

Fong³

et al. 2022

Preprint

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Technologies operating on the basis of quantum mechanical laws and resources such as phase coherence and entanglement are expected to revolutionize our future. Quantum technologies are often divided into four main pillars: computing, simulation, communication, and sensing & metrology. Moreover, a great deal of interest is currently also nucleating around energy-related quantum technologies. In this Perspective, we focus on advanced superconducting materials, van der Waals materials, and moiré quantum matter, summarizing recent exciting developments and highlighting a wealth of potential applications, ranging from high-energy experimental and theoretical physics to quantum materials science and energy storage.

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Section: Niobium Resonatorsmentioning

confidence: 99%

Materials and devices for fundamental quantum science and quantum technologies

Polini¹,

Giazotto²,

Fong³

et al. 2022

Preprint

Self Cite

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“…To further increase sensitivity, one can distinguish dielectric loss from the non-dielectric "background" by making a separate measurement of that background, then subtracting it from the loss measured in the presence of the dielectric under study [22]. If those measurements are made in separate cooldowns, however, then comparison with the background may be corrupted by cooldownto-cooldown variation of cavity properties.…”

Section: Measurement Technique a Overviewmentioning

confidence: 99%

Precision measurement of the microwave dielectric loss of sapphire in the quantum regime with parts-per-billion sensitivity

Read¹,

Chapman²,

Lei³

et al. 2022

Preprint

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Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes [1]. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of 100 parts-per-billion [2-4], but because these inferences are drawn from fully fabricated devices with many loss channels, they do not definitively implicate or exonerate the dielectric. To resolve this ambiguity, we have devised a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of 5 parts-per-billion. The method, which we call the dielectric dipper, involves the in-situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the sample's participation in the cavity mode enables a differential measurement of the sample's dielectric loss tangent. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures, and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of EFG sapphire, from which we infer a bulk loss tangent of 62(7) × 10 −9 and a substrate-air interface loss tangent of 12(2) × 10 −4 [5]. For a typical transmon [1], this bulk loss tangent would limit device quality factors to Q 20 million, suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire [2,3]. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than 15(5) × 10 −9 . As this bound is about four times smaller than the bulk loss tangent of EFG sapphire, use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.

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“…A work from Goryachev et al have determined the loss tangent of lithium niobate in the order 10 −5 [5] at the single photon level. Other studies on lithium tantalate [6] and silicon [7] report schemes for microwave characterization, including temperature dependency of loss tangent and permittivity. However, the data available in the literature on these crystals is still very limited.…”

Section: Fermilab-pub-22-373-sqmsmentioning

confidence: 99%

Methods for microwave characterization of electro-optic crystals for quantum transduction

Zorzetti

Gonin

Kazakov

et al. 2022

2022 IEEE International Conference on Quantum Computing and Engineering (QCE)

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Microwave-optic quantum transducers are essential to develop distributed quantum networks and implement related quantum communication protocols. Three dimensional high-coherence microwave cavities embedded with electro-optic nonlinear materials provide promising platforms for microwaveoptic frequency conversion. However, so far, the properties for such dielectric crystals operating at milli-Kelvin cryogenic temperatures have not been well understood. Here, we propose a scheme to precisely measure the dielectric constant and dissipation mechanisms of electro-optic materials, such as Lithium Niobate, at the quantum threshold. We will use Fermilab's three dimensional superconducting cavities with long coherence time. The proposed method of characterization lays the foundation for engineering quantum transduction devices with high conversion efficiency and high-fidelity.

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Measurement of the Low-temperature Loss Tangent of High-resistivity Silicon with a High Q-factor Superconducting Resonator

Cited by 4 publications

References 16 publications

Materials and devices for fundamental quantum science and quantum technologies

Materials and devices for fundamental quantum science and quantum technologies

Precision measurement of the microwave dielectric loss of sapphire in the quantum regime with parts-per-billion sensitivity

Methods for microwave characterization of electro-optic crystals for quantum transduction

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