Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond

Grazioso, Fabio; Patton, Brian; Delaney, Paul; Markham, Matthew; Twitchen, Daniel J.; Smith, Jason M.

doi:10.1063/1.4819834

Cited by 47 publications

(52 citation statements)

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“…1(c)]. This splitting, approximately 12 eV=strain, reflects the reduction of the C 3v symmetry of the c axis-oriented defects, whose doubly degenerate excited state orbitals at zero strain are predicted [2] to closely match the structure of NV centers in diamond [31,32]. In contrast, the basal-oriented defects have highly split ZPLs even at zero strain due to the crystal field.…”

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confidence: 93%

“…Optical interferometry is a more precise technique for sensing strain in bulk samples, but it relies on measuring mechanical displacement (with sensitivities down to the 10 − pm level [34]). Spin-based strain sensing should, thus, be a competitive technique for measuring strain in micro-and nanostructures, where absolute displacements are extremely small, as well as in applications involving full tensor-strain measurements [32].…”

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confidence: 99%

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Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers

et al. 2014

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The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields

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confidence: 93%

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confidence: 99%

Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers

et al. 2014

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“…Furthermore, the presented system can be used in fluid mechanics applications as shown recently by diamond nanocantilevers 28 . This work was confined within the ground state spin levels associated with single NVCs, however excited state spin levels offer further opportunities 30 . One can benefit from the controllable stress in such a system to manipulate the spin levels in the excited state of NVCs 31 , which is the backbone of their application in quantum information processing at low temperature [32][33] .…”

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confidence: 99%

Thin Circular Diamond Membrane with Embedded Nitrogen-Vacancy Centers for Hybrid Spin-Mechanical Quantum Systems

et al. 2016

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Hybrid quantum systems (HQSs) have attracted several research interests in the last years. In this Letter, we report on the design, fabrication, and characterization of a novel diamond architecture for HQSs that consists of a high quality thin circular diamond membrane with embedded near-surface nitrogen-vacancy centers (NVCs). To demonstrate this architecture, we employed the NVCs by means of their optical and spin interfaces as nanosensors of the motion of the membrane under static pressure and in-resonance vibration, as well as the residual stress of the membrane. Driving the membrane at its fundamental resonance mode, we observed coupling of this vibrational mode to the spin of the NVCs by Hahn echo signal. Our realization of this architecture will enable futuristic HQS-based applications in diamond piezometry and vibrometry, as well as spin-mechanical and mechanically mediated spin-spin coupling in quantum information science. KEYWORDS: hybrid quantum systems, nitrogen-vacancy center, thin circular diamond membrane, harmonic oscillator, Hahn echoThere have been several recent proposals 1-2 to exploit mechanical degrees of freedom to control and couple nitrogen-vacancy centers (NVCs) for applications in quantum information science 1-4 and nano-force sensing [5][6] . For example, mechanical motions of diamond microcantilevers have been detected via the electronic spins of NVCs 7-9 . Such proposals rely on the incorporation of NVCs into well-characterized nano/micro-mechanical structures that behave according to simple models from continuum mechanics. However, the realization of such ideal structures, free from complications like residual stress, is a significant challenge yet to be achieved. Thus, a vital first step is to comprehensively characterize these factors and their influence on the performance of the structures. Furthermore, unlike other materials such as SiN 10 , the manufacturing of large, homogenous, and high-quality thin diamond membranes for the simple, robust and scalable fabrication of diamond nano/micro-mechanical structures is yet to be demonstrated.In this Letter, we report a novel approach to the systematic design, fabrication, and characterization of a circular diamond membrane (hereinafter will be mentioned shortly as "membrane") incorporating NVCs at the average depth of ≈20 nm. The membrane has a diameter of ≈1.1 mm, a thickness of ≈1.2 μm and surface roughness of ≈0.4 nm. To examine the mechanical properties of the membrane, we employed the confocal microscopy technique that uses the fluorescence point spread function (PSF) of individual embedded NVCs as nanosensors to measure the deflection of the membrane under an applied pressure. In this way, and by applying the theory of thin membranes 11 we have inferred an effective thickness of ≈1.2 µm and average radial residual stress of 54 MPa. By means of the spin-mechanical coupling of the NVCs, we employed them as nanoprobes for the motion of the membrane under applied static pressure (DC) and in-resonance vibration (AC), as we...

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“…Ultrasensitive electromagnetic field [3][4][5][6][7][8], strain [9,10], pressure [11], and temperature [12,13] sensors as well as integrated quantum information processors [14][15][16] operating at ambient conditions have been prototyped using NVs. These capabilities are in large part due to the unique properties of the NV's electron spin, which may be optically initialized and manipulated by microwave signals [17,18].…”

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Electron spin contrast of Purcell-enhanced nitrogen-vacancy ensembles in nanodiamonds

et al. 2017

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Nitrogen-vacancy centers in diamond allow for coherent spin state manipulation at room temperature, which could bring dramatic advances to nanoscale sensing and quantum information technology. We introduce a novel method for the optical measurement of the spin contrast in dense nitrogen-vacancy (NV) ensembles. This method brings a new insight into the interplay between the spin contrast and fluorescence lifetime. We show that for improving the spin readout sensitivity in NV ensembles, one should aim at modifying the far field radiation pattern rather than enhancing the emission rate.Nitrogen-vacancy color centers (NV) in diamond are fluorescent lattice defects resulting from a vacancy and an adjacent nitrogen substitution [1,2]. These color centers have proven to be excellent testbeds for novel nanoscale optical devices.Ultrasensitive electromagnetic field [3][4][5][6][7][8], strain [9,10], pressure [11], and temperature [12,13] sensors as well as integrated quantum information processors [14][15][16] operating at ambient conditions have been prototyped using NVs. These capabilities are in large part due to the unique properties of the NV's electron spin, which may be optically initialized and manipulated by microwave signals [17,18]. The NV exhibits a spin-dependent fluorescence rate, which can be used for optical spin state readout [19]. We have calibrated the laser power using saturation measurements to ensure that both nanodiamonds on sapphire and TiN experience a similar optical excitation rate opt 1.5 MHz k [51]. For larger pump powers, we found that the contrast 1 T C drops and almost completely vanishes in strong saturation [51]. The origin of this effect, which is still under investigation, can be attributed to the charge exchange processes involving proximal NV centers and/or nitrogen impurities. Such dynamics may be especially pronounced in dense ensembles like ours, e.g. due to Auger-type effects. This effect makes it impractical to work in the saturation regime and limits the observable spin contrast values.Before rigorously investigating the observed dependence of spin contrast on fluorescence lifetime, we present a qualitative explanation, based on the NV level structure (Figure 4(a)). For simplicity, in this discussion we assume that the optical excitation rate is much lower than all the level decay rates. Following the absorption of a photon, both the excited state (ES) and the singlet levels relax into the ground state (GS) levels before the next photon is absorbed. The excited states (ES) of the s 0 m  and s 1 m  subsystems (i.e. levels 0e and 1e respectively) have equal radiative decay rates ( rad k ) into their respective ground states (GS) 0g and 1g . However, the fluorescence rate of the s 0 m  subsystem is higher, because the non-radiative decay of 0e through the singlet state s is less probable than that of 1e ( Here,is the rate of spin-conserving direct ES decay, opt k is the optical pumping rate, () cross i k are the intersystem crossing rates from 0e and 1e to the singlet state...

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Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond

Abstract: , J. M. (2013). Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond.

Cited by 47 publications

References 28 publications

Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers

Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers

Thin Circular Diamond Membrane with Embedded Nitrogen-Vacancy Centers for Hybrid Spin-Mechanical Quantum Systems

Electron spin contrast of Purcell-enhanced nitrogen-vacancy ensembles in nanodiamonds

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