Measurement of the Extrinsic Series Elements of a Microwave Mesfet Under Zero Current Conditions

Diamand, F.; Laviron, M.

doi:10.1109/euma.1982.333103

Cited by 59 publications

(13 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…presented in Table II are in perfect agreement with those obtained from the RFprobing. The bias dependent resistive parameters of the FET were determined according to the expressions (7), (8) and are equal Rds = 166 Q, Gm -57.5 mS for Vds = 4V and Ids = 80 mA.…”

Section: Resultsmentioning

confidence: 99%

Determination of the MESFET Resistive Parameters using Rf-Wafer Probing

Vogel

1987

17th European Microwave Conference, 1987

View full text Add to dashboard Cite

A simple method has been proposed to measure the resistive parameters of MESFET's. An equivalent circuit of the forward biased FET valid in a low frequency Limit which allows to determine the gate, source and drain parasitic resistances from the measured parameters was developed. The ideality factor of the gate diode and the channel resistance can also be simply determined. The method does not require separate DC characterisation and can be applied in conjunction with the small-signal microwave S-matrix measurements.

show abstract

Section: Resultsmentioning

confidence: 99%

Determination of the MESFET Resistive Parameters using Rf-Wafer Probing

Vogel

1987

17th European Microwave Conference, 1987

View full text Add to dashboard Cite

show abstract

“…Dambrine et al 111 described a method for parasitic extraction based upon so-called "coldfet" [4] S parameters, recorded at zero drain bias, where a much simplified equivalent circuit can be defined [5]. They showed that these measurements performed under conditions of forward gate conduction and reverse bias beyond pinch-off would yield values for the parasitic elements by suitable manipulation of 2 and Y parameters.…”

Section: Introductionmentioning

confidence: 98%

“…HE small signal equivalent circuit for MESFET and T HEMT devices can be extracted directly from measured S parameters if parasitic elements are first determined by an independent method 111- [5]. Dambrine et al 111 described a method for parasitic extraction based upon so-called "coldfet" [4] S parameters, recorded at zero drain bias, where a much simplified equivalent circuit can be defined [5].…”

Section: Introductionmentioning

confidence: 99%

Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements

White

Healy

1993

IEEE Microw. Guid. Wave Lett.

100

View full text Add to dashboard Cite

An improved equivalent circuit for MESFET and HEMT devices under zero drain bias pinched-off conditions is proposed. Parasitic gate and drain capacitances evaluated from low-frequency Y parameters using this circuit are approximately equal under conditions where equality would be expected from bond pad geometry considerations. In contrast, the previously used circuit considerably overestimates parasitic drain capacitance.

show abstract

“…This implies that the Sparameters should be measured while the dissipated power is almost zero at V ds ϭ 0. Diamand and Laviron [5] proposed a method to extract parasitic inductances and resistances under a zero drain-source (ds) voltage. Although their method may be applicable for the determination of both parasitic resistances and inductances, it is used in our work to determine the parasitic inductances only.…”

Section: Introductionmentioning

confidence: 99%

Novel technique for estimating metal semiconductor field effect transitor parasitics

Khalaf

Riad

2002

Int J RF and Microwave Comp Aid Eng

View full text Add to dashboard Cite

A novel technique is developed for extracting the gate resistance, parasitic inductances, and pad capacitances for metal semiconductor field effect transistor devices. The parameters are extracted from two sets of S-parameter measurements: cold measurements and pinch-off measurements. The proposed technique gives rise to reliable results and it is insensitive to the unavoidable measurement errors over any frequency range. The technique is tested on hypothetical data and applied to S-parameter measurements of a few metal semiconductor field effect transistor devices on the same wafer to provide a unique solution.

show abstract

Measurement of the Extrinsic Series Elements of a Microwave Mesfet Under Zero Current Conditions

Cited by 59 publications

References 2 publications

Determination of the MESFET Resistive Parameters using Rf-Wafer Probing

Determination of the MESFET Resistive Parameters using Rf-Wafer Probing

Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements

Novel technique for estimating metal semiconductor field effect transitor parasitics

Contact Info

Product

Resources

About