Measurement of the electronic structure of crystalline silicon by electron momentum spectroscopy

Vos, Maarten; Bowles, Cameron A; Kheifets, Anatoli; Sashin, Vladimir; Weigold, E.; Aryasetiawan, Ferdi

doi:10.1016/j.elspec.2004.02.051

Cited by 4 publications

(4 citation statements)

References 8 publications

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“…The calculated anisotropy of the dispersion was small and could not be confirmed by the experiment. This is in contrast to single-crystal films of silicon [3,4] and copper [5], where the experimental single-crystal results clearly resolve the anisotropy of the electronic structure. These measurements of a metallic phase of vanadium oxide open the way for studying an insulating phase, which cannot be described by band structure theory.…”

Section: Discussioncontrasting

confidence: 81%

“…In the last few years, the technique has been tested for several 'simple' cases, where the samples are considered to be well understood materials. For example, single crystals of graphite [2], silicon [3,4] and copper [5] were studied. In general, it became clear that, in spite of multiple scattering, quantitative information can be obtained by EMS, and even for the simple cases reasonable agreement between measurement and theory can be obtained only if many-body effects are incorporated in the theory.…”

Section: Introductionmentioning

confidence: 99%

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Spectral momentum densities of vanadium and vanadium oxide as measured by high energy (e, 2e) spectroscopy

Chen¹,

Gale²,

Kheifets³

et al. 2005

J. Phys.: Condens. Matter

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The spectral momentum densities of vanadium metal and V2O3 are measured by electron momentum spectroscopy. Results are compared with band structure calculations based on density functional theory (DFT). Qualitatively, the agreement between theory and experiment is good. The calculated total band width of vanadium metal (6.5 eV) is in excellent agreement with the observed one (6.5 ± 0.25 eV). The splitting between the outer and inner valence bands in V2O3 is 2 eV larger in the experiment than in the density functional theory calculation. The observed momentum distributions agree reasonably well with the calculated distributions with the exception of the intensity of the outer valence band relative to the inner valence band in V2O3: the outer valence band is less intense than calculated. The momentum density near the Fermi level in V metal resembles that of atomic V 3d orbitals. However, momentum profiles of the V 3d orbitals in V2O3 are much more sharply peaked than the atomic 3d orbital in both the theory and experiment. Correlation effects are discussed and theoretical problems in describing EMS data from narrow band systems are identified.

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Section: Discussioncontrasting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Spectral momentum densities of vanadium and vanadium oxide as measured by high energy (e, 2e) spectroscopy

Chen¹,

Gale²,

Kheifets³

et al. 2005

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…In these measurements we used the procedure described in Ref. 8 to minimize the influence of diffraction. At first glance, the three experimental measurements seem completely different, but closer inspection and a comparison with we measure again a ⌫ point at p y = 0 and intensity corresponds to the top of the valence band.…”

Section: Resultsmentioning

confidence: 99%

“…We have investigated in previous works the dispersion along the main symmetry directions, 7 the influence of sample rotations on the measured spectral momentum densities, 8 and the possibility of measuring momentum densities along lines in momentum space, not going through zero momentum. 9 This last option is investigated in this paper in more detail.…”

Section: Introductionmentioning

confidence: 99%

Band structure of silicon as measured in extended momentum space

et al. 2006

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Direct measurement of the wave function ͑or at least the modulus squared of the wave function, the spectral function͒ is an important goal in electron spectroscopy. This requires a state-selective ͑i.e., energy resolved͒ measurement of the momentum density in all of momentum space, not just the reduced Brillouin zone. Photoemission has been used very successfully to measure dispersion, mainly in the reduced zone scheme. Compton measurements determine a projection of the momentum density in the full momentum space, but do not contain energy information. Here we present electron momentum spectroscopy measurements of extremely thin silicon single crystals, that resolve both energy and momentum, not just the reduced momentum. Measurements were done along different lines in extended momentum space, that are equivalent within the reduced zone scheme. For different lines different bands dominate, resulting in dramatic different spectral momentum densities. The observed intensities compare well to the spectral function as obtained by linear muffin tin band structure calculations. The results show a unified picture that forms a bridge between Compton measurements determining densities and photoemission measurements determining dispersion.

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Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

Nixon

Vos

Bowles

et al. 2006

Surf. Interface Anal.

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The Cu-Si interface was studied by electron momentum spectroscopy. A thick disordered interface is formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity as a function of binding energy and target electron momentum. Momentum resolution is demonstrated to be very helpful in interpreting the data, even for these disordered interfaces. The interface layer has a well-defined electronic structure, different from either Si or Cu, and consistent with silicide formation. Information is obtained about the total bandwidth of the interface compound, effective Brillouin zone size and Fermi radius. No clear differences are observed in the electronic structure of the interface layer for Si deposited on Cu or Cu deposited on Si.

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Measurement of the electronic structure of crystalline silicon by electron momentum spectroscopy

Cited by 4 publications

References 8 publications

Spectral momentum densities of vanadium and vanadium oxide as measured by high energy (e, 2e) spectroscopy

Spectral momentum densities of vanadium and vanadium oxide as measured by high energy (e, 2e) spectroscopy

Band structure of silicon as measured in extended momentum space

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

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