Measurement of the electrical resistance of metal-thermoelectric semiconductor contacts

McConnell, G. K.; Sehr, Robert

doi:10.1016/0038-1101(61)90033-8

Cited by 5 publications

(1 citation statement)

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“…[6][7][8] The contact resistance between TE materials and metal electrodes has been investigated by McConnell and Sehr. 9 Mengali and Seiler 10 reported a contact resistance value of 1 9 10 6 X cm 2 in the case of copper joined to a bismuth-telluride-based thermoelement. Recently, various studies have reported contact resistances for silicide compounds such as Mg 2 Si.…”

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confidence: 99%

Design of Apparatus for Ni/Mg2Si and Ni/MnSi1.75 Contact Resistance Determination for Thermoelectric Legs

Thimont

Lognoné

Goupil

et al. 2014

Journal of Elec Materi

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This is an author's version published in: http://oatao.univ-toulouse.fr/24435In recent decades, thermoelectricity has been widely studied as a potential new source of renewable energy. One of the major challenges to improve the efficiency of thermoelectric (TE) devices is to minimize the contact resistance between the active material and the electrodes, since this represents the major loss of charge in a TE module. This article describes the fabrication of an apparatus for TE leg characterization built with commercial and custom-made parts based on the analog one-dimensional transmission-line method. This device permits contact resistance measurements of bulk TE legs. p-and n-type TE materials, Mg 2 Si 0.98 Bi 0.02 and MnSi 1.75 Ge 0.02 , respectively, were metallized with nickel foils and used as test materials for contact resistance characterization. Contact resistance values of 0.5 mX mm 2 for Ni/Mg 2 Si 0.98 Bi 0.02 junctions and 4 mX mm 2 for Ni/MnSi 1.75 Ge 0.02 junctions have been measured. Contact resistance measurements are discussed depending on materials processing and the experimental measurement conditions.

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