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Rj, Reeves; Rm, Macfarlane

doi:10.1103/physrevb.39.5771

Cited by 8 publications

(2 citation statements)

References 12 publications

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“…3 a). In addition to the displacement of the center of the spectral hole, we also observe a broadening of the profile, which is partly due to inhomogeneities on the microscopic level in the different ions' response to applied strain, as observed in other rare-earth doped systems [28,29], partly due to a residual inhomogeneity in the applied strain.…”

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confidence: 51%

Mechanical Tunability of an Ultranarrow Spectral Feature of a Rare-Earth-Doped Crystal via Uniaxial Stress

et al. 2020

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Rare-earth doped crystals have numerous applications ranging from frequency metrology to quantum information processing. To fully benefit from their exceptional coherence properties, the effect of mechanical strain on the energy levels of the dopants -whether it is a resource or perturbation -needs to be considered. We demonstrate that by applying uniaxial stress to a rare-earth doped crystal containing a spectral hole, we can shift the hole by a controlled amount that is larger than the width of the hole. We deduce the sensitivity of Eu 3+ ions in an Y2SiO5 matrix as a function of crystal site and the crystalline axis along which the stress is applied. PACS numbers: 42.50.Wk,42.50.Ct.,76.30.Kg Rare-earth ions embedded in a crystalline matrix, at cryogenic temperatures, exhibit optical transitions with excellent coherence properties [1] combined with the ease of use of solid state materials. Such properties can be used for example in classical [2] and quantum [3-6] information processing schemes, quantum optical memories [7,8], quantum probes of photonic effects [9], and in ultra-high-precision laser stabilisation and spectroscopy [10][11][12]. In these materials, randomly distributed perturbations from the local matrix result in a broad inhomogeneous profile of the ion absorption spectrum, but spectral hole burning techniques can be used to realize narrow spectral features with a resolution only limited by the individual doping ions. Moreover, as the spectral properties of the individual ions are sensitive to the surrounding crystalline matrix, external stress applied to the crystal in the plastic regime will frequency displace a previously imprinted spectral hole, providing an interesting resource for tuning spectral holes reversibly, in addition to probing stress fields in a spatially resolved manner. Other applications of stress sensitivity can be found in the field of quantum optomechanics [13], where the vibrations of a mechanical resonator modulate the energy levels of quantum two-level system emitters embedded in the resonator material itself, as observed experimentally in resonators containing quantum dots [14] or Nitrogen-Vacancy centers [15][16][17], and proposed theoretically for rare-earth ions doped resonators [18,19].In this work, we concentrate on Eu 3+ ions in a Y 2 SiO 5 host matrix (Eu:YSO) at a temperature of 3.15 K, as this material exhibits one of the narrowest optical transitions among solid-state emitters. We exploit the 580 nm optical transition 7 F 0 → 5 D 0 which possesses near lifetime limited coherence times in the ms range [20,21]. The YSO crystal has two non-equivalent locations within the unit cell where Eu 3+ can substitute for Y 3+ , referred to as site 1 and 2 (vacuum wavelengths of 580.04 nm and 580.21 nm, respectively). We use the technique of spectral hole burning to benefit from the narrow homogeneous linewidth and at the same time the large signal to noise ratio coming from working with an ensemble of ions. Spectral holes are formed by resonant optical excitation and dec...

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confidence: 51%

Mechanical Tunability of an Ultranarrow Spectral Feature of a Rare-Earth-Doped Crystal via Uniaxial Stress

et al. 2020

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“…Instead, we may, at least partially, attribute the observed effect to an inhomogeneity of the different ions' responses on a microscopic scale, as suggested by other authors for a different system [22]. In our case, the ions forming the spectral hole all have a slightly different electromagnetic environment, coming from a nonuniform distribution of static strain within the crystal which stems essentially from local distortion of the crystal lattice due to doping, which also accounts for the large inhomogeneous profile.…”

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confidence: 62%

Inhomogeneous response of an ion ensemble from mechanical stress

Zhang

Galland

Lučić

et al. 2020

Phys. Rev. Research

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Material strain has recently received growing attention as a complementary resource to control the energy levels of quantum emitters embedded inside a solid-state environment. Some rare-earth ion dopants provide an optical transition which simultaneously has a narrow linewidth and is highly sensitive to strain. In such systems, the technique of spectral hole burning, in which a transparent window is burned within the large inhomogeneous profile, allows one to benefit from the narrow features, which are also sensitive to strain, while working with large ensembles of ions. However, working with ensembles may give rise to inhomogeneous responses among different ions. We investigate experimentally how the shape of a narrow spectral hole is modified due to external mechanical strain, in particular, the hole broadening as a function of the geometry of the crystal sites and the crystalline axis along which the stress is applied. Studying these effects is essential in order to optimize the existing applications of rare-earth-doped crystals in fields which already profit from the more-well-established coherence properties of these dopants, such as frequency metrology and quantum information processing, or even suggest alternative applications of these materials, for example, as robust devices for force-sensing or highly sensitive accelerometers.

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The Effect of Uniaxial Stress on the Spectrum of a Neutron‐Coloured Sapphire Studied by Spectral Hole Burning

Malkin

Aizengendler

Dolindo

et al. 1992

Physica Status Solidi (b)

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The influence of uniaxial compressive stress on the 755.6 nm line of colour centres in neutron-irradiated sapphire at LHeT is studied. To improve the sensitivity spectral hole burning was applied. The shift and the splitting of spectral holes under stress were accounted for by the removal of the orientational degeneracy of colour centres. The corresponding piezospectroscopic constants are found and an assumption about the structure of the centres is made.Der EinfluD einachsiger Kompression auf die 755.6 nm Linie der Farbzentren in neutronenbestrahltem Saphir wird bei der Temperatur des fliissigen Heliums untersucht. Die Empfindlichkeit wird durch Lochbrennen in das Spektrum erhoht. Verschiebung und Aufspaltung der Spektrallocher unter Spannung werden durch die Aufhebung der Orientierungsentartung der Farbzentren berucksichtigt. Die entsprechcnden piezoelektrischen Konstanten werden ermittelt und die Struktur der Zentren wird diskutiert.

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Measurement of the effect of uniaxial stress on the spectrum ofCaF2:Pr3+

Cited by 8 publications

References 12 publications

Mechanical Tunability of an Ultranarrow Spectral Feature of a Rare-Earth-Doped Crystal via Uniaxial Stress

Mechanical Tunability of an Ultranarrow Spectral Feature of a Rare-Earth-Doped Crystal via Uniaxial Stress

Inhomogeneous response of an ion ensemble from mechanical stress

The Effect of Uniaxial Stress on the Spectrum of a Neutron‐Coloured Sapphire Studied by Spectral Hole Burning

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