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Mitchell, James B.; Forand, J. Luc; Ng, Cheuk-Yiu; Levac, D. P.; Mitchell, R. E.; Mul, P.M.; Claeys, W.; Sen, Ananya; McGowan, J. Wm.

doi:10.1103/physrevlett.51.885

Cited by 76 publications

(14 citation statements)

References 23 publications

(9 reference statements)

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“…Mitchell et al 11 found that the thermalized H 3 þ ion is converted into 3 H or H 2 þ H at the moment of impact due to dissociative recombination. 11,26,33 In this way, the H 3 þ ion brings not only energy to break the Si-Si bond (2.3 eV) but also atomic H to passivate the Si dangling bonds and to form a stable desorption product.…”

Section: The Effect Of An Externally Applied Biasmentioning

confidence: 99%

“…The H 3 þ ion converts into either molecular and atomic hydrogen (H 2 þ H) or only atomic hydrogen (3 H) by dissociative recombination at the moment of impact. 11 Desorbing species are also formed near the ion penetration depth and this shows the chemical activity of the hydrogenic ions. 10 Atomic H diffusing through Si can break a weak Si-Si bond, it can passivate the Si dangling bonds formed, and it can recombine with another H atom and form molecular H 2 .…”

Section: Introductionmentioning

confidence: 99%

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Chemical sputtering by H2+ and H3+ ions during silicon deposition

Landheer

Goedheer

Poulios

et al. 2016

Journal of Applied Physics

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We investigated chemical sputtering of silicon films by H y þ ions (with y being 2 and 3) in an asymmetric VHF Plasma Enhanced Chemical Vapor Deposition (PECVD) discharge in detail. In experiments with discharges created with pure H 2 inlet flows, we observed that more Si was etched from the powered than from the grounded electrode, and this resulted in a net deposition on the grounded electrode. With experimental input data from a power density series of discharges with pure H 2 inlet flows, we were able to model this process with a chemical sputtering mechanism. The obtained chemical sputtering yields were (0.3-0.4) 6 0

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Section: The Effect Of An Externally Applied Biasmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Chemical sputtering by H2+ and H3+ ions during silicon deposition

Landheer

Goedheer

Poulios

et al. 2016

Journal of Applied Physics

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“…Geppert & Larsson 2008). To elucidate these completely by experimental methods is also far from trivial and it was as late as in the 1990s when Datz et al (1995) ingeniously applied the technique of merged ion electron beams using a storage ring in conjunction with a previously invented grid technique (Mitchell et al 1982) to obtain solid information about these distributions. Subsequently, heavy-ion storage rings like ASTRID (Denmark), TSR (Heidelberg) and CRYRING (Stockholm, Sweden) have been successfully used as tools for investigations of astrophysically relevant DR reactions (see e.g.…”

Section: Introductionmentioning

confidence: 99%

Experimental studies of the dissociative recombination of CD₃CDOD⁺and CH₃CH₂OH$_{2}^+$Unknown node mtable found in MathML fragment.

Hamberg

Zhaunerchyk

Vigren

et al. 2010

A&A

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Aims. We determine branching fractions, cross sections and thermal rate constants for the dissociative recombination of CD 3 CDOD + and CH 3 CH 2 OH + 2 at the low relative kinetic energies encountered in the interstellar medium. Methods. The experiments were carried out by merging an ion and electron beam at the heavy ion storage ring CRYRING, Stockholm, Sweden.Results. Break-up of the CCO structure into three heavy fragments is not found for either of the ions. Instead the CCO structure is retained in 23 ± 3% of the DR reactions of CD 3 CDOD + and 7 ± 3% in the DR of CH 3 CH 2 OH + 2 , whereas rupture into two heavy fragments occurs in 77 ± 3% and 93 ± 3% of the DR events of the respective ions. The measured cross sections were fitted between 1-200 meV yielding the following thermal rate constants and cross-section dependencies on the relative kinetic energy:

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“…A second point to made about the Gougousi et al three-body mechanism is that it requires the formation of long-lived H 3 * Rydberg molecules in DR of H 3 + . Such have been only been found in merged-beam [43] but not in ISR experiments.…”

Section: Afterglow Data After 1984mentioning

confidence: 83%

A critical review of H₃⁺recombination studies

Johnsen¹

2005

J. Phys.: Conf. Ser.

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After more that 30 years of experimental and theoretical work it now appears that theory and experiment on H 3 + recombination have finally converged. Since the storage ring results come very close to the latest theoretical calculations one might conclude that "the case is closed". However, some troublesome issues remain and should not be dismissed too quickly. For instance, some afterglow measurements showed faster decays at early afterglow times. It is now clear that the fast recombining species cannot be vibrationally excited ions since the same rates were found for spectroscopically identified H 3 + ions in v=0. On the other hand, there is no convincing explanation for the very small rates obtained in the Prague experiments at low H 2 densities. It is also puzzling that some measurements find nearly the same recombination coefficients for H 3 + and D 3 + , while others indicate that H 3 + recombines much faster. It has often been stated that vibrational excitation of the H 3 + ions tends to enhance recombination, but the evidence for that is far from solid; some observations suggest that the opposite is just as likely. IntroductionThe history of recombination studies of the H 3 + ion still presents a confusing picture, even to someone who has worked on experimental studies of this ion for more than 30 years and has closely followed the "ups and downs" of experimental results and the interplay between experiment and theory. It is most gratifying that we are now at the point where the best available theory [1, 2] agrees rather well with the latest results of ion-storage-ring experiments [3]. Has the time come to close the books and to say that no further work is needed? I do not think so.If one looks at the experimental results that were obtained over the years (see table 1 and table 2), one notices that the published thermal rate coefficients at temperatures near 300 K have varied by more than one order of magnitude. What shall we make of this large variation? Discarding the older data as "flawed" is not acceptable and may deprive us of useful insights. The variations do not seem to due to ordinary experimental errors such as calibration errors of probes etc. Almost all experimenters also studied the "benchmark ion" O 2 + to test their procedures and in that case the 300 K rate coefficients agree rather well (see e.g. the references to O 2 + data in [4] and [5]). It is far more likely that the poorly controlled and usually unknown internal energy of the H 3 + ion (vibrational, rotational) had an effect on the measured recombination rate. Of course, the vibrational energy of the "benchmark" O 2 + ions also was generally poorly controlled, but fortunately it seems to have only a small effect on the total recombination rate [6] and hence did not lead to significant discrepancies between results.

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Measurement of the Branching Ratio for the Dissociative Recombination ofH3++e

Cited by 76 publications

References 23 publications

Chemical sputtering by H2+ and H3+ ions during silicon deposition

Chemical sputtering by H2+ and H3+ ions during silicon deposition

Experimental studies of the dissociative recombination of CD₃CDOD⁺and CH₃CH₂OH$_{2}^+$Unknown node mtable found in MathML fragment.

A critical review of H₃⁺recombination studies

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Measurement of the Branching Ratio for the Dissociative Recombination ofH3++e

Cited by 76 publications

References 23 publications

Chemical sputtering by H2+ and H3+ ions during silicon deposition

Chemical sputtering by H2+ and H3+ ions during silicon deposition

Experimental studies of the dissociative recombination of CD3CDOD+and CH3CH2OH$_{2}^+$Unknown node mtable found in MathML fragment.

A critical review of H3+recombination studies

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Experimental studies of the dissociative recombination of CD₃CDOD⁺and CH₃CH₂OH$_{2}^+$Unknown node mtable found in MathML fragment.

A critical review of H₃⁺recombination studies