1994
DOI: 10.1109/3.283768
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Measurement of the anisotropy of two-photon absorption coefficients in zincblende semiconductors

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Cited by 110 publications
(83 citation statements)
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“…The polarization dependence of the TPA coefficient is dependant on the crystalline orientation of the material [12]. The polarization dependence of TPA in (001) GaAs at 950 nm has been previously reported in [13]. As a linear polarization is rotated through 360 degrees, the TPA dependence is periodic, with a period of 90 degrees, and a variation of approximately 27 % in the TPA coefficient (β).…”
Section: Introductionmentioning
confidence: 98%
“…The polarization dependence of the TPA coefficient is dependant on the crystalline orientation of the material [12]. The polarization dependence of TPA in (001) GaAs at 950 nm has been previously reported in [13]. As a linear polarization is rotated through 360 degrees, the TPA dependence is periodic, with a period of 90 degrees, and a variation of approximately 27 % in the TPA coefficient (β).…”
Section: Introductionmentioning
confidence: 98%
“…It should be noted that the TPA process occurring in GaAs material is polarization sensitive [20]. This polarization dependence is further intensified by the employment of a resonance cavity structure.…”
Section: Tpa Microcavitymentioning
confidence: 99%
“…(19) and (20) in Ref. [33]). This contribution, however, is eliminated, together with the associated highfrequency oscillation by the Fourier-transform filtering applied in the next step.…”
Section: B Laser Sourcementioning
confidence: 99%