Using birefringence techniques we have measured the critical exponents β, γ, and δ in As-doped TbVO4, a structural realization of the random-field Ising model where random strain fields are introduced by V-As size mismatch. For pure TbVO4 we observe the expected classical critical exponents, while for a mixed sample with 15% As concentration our results are β = 0.31 ± 0.03, γ = 1.22±0.07 and δ = 4.2±0.7. These values are consistent with the critical exponents for the short range pure Ising model in three dimensions in agreement with a prediction by Toh. The susceptibility data showed a crossover with temperature from classical to random field critical behaviour.