Measurement of spin current using spin relaxation modulation induced by spin injection

Ando, Kotoji; Nakayama, Hiroyasu; Kajiwara, Y.; Kikuchi, Daisuke; Sasage, K.; Uchida, K.; Ikeda, Kazuma; Saitoh, Eiji

doi:10.1063/1.3063081

Cited by 14 publications

(10 citation statements)

References 11 publications

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“…Up to now, ISHE have been observed in many metals, and many metal/metal or oxide/metal systems have been investigated for ISHE and/or spin pumping. 7,[13][14][15][16][17][18][19][20][21][22][23][24][25][26] On the other hand, no ISHE was observed in any oxide, although there are a lot of conductive oxides.…”

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confidence: 97%

All-oxide system for spin pumping

Qiu

Kajiwara

Ando

et al. 2012

Applied Physics Letters

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In a simple all-oxide system, spin pumping driven by spin wave resonances have been investigated by using the inverse spin-Hall effect (ISHE). In a lanthanum doped yttrium iron garnet (La:YIG)/indium tin oxide (ITO) bilayer film, the spin pumping generates and injects a spin current into the ITO layer, and an electromotive force signal is observed via the ISHE. The electromotive forces were measured depend on the out-of-plane magnetic-field-angle and the microwave excitation power, which were consistent with the theoretical prediction of the ISHE. The realization of the all-oxide spin pumping system extends possibilities for the oxide spintronics.

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confidence: 97%

All-oxide system for spin pumping

Qiu

Kajiwara

Ando

et al. 2012

Applied Physics Letters

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“…are similarly defined. According to the general expression(29), j (B) = −L 0,0 i, j (−B) − L i,0 0, j (−B) − L 0 = S cr ij /2, L i,0 0, j = −T ∂I i /∂V Sj , and L 0, j i,0 = −T ∂I Sj /∂V i .We immediately obtain(48) and (51). Let us also derive (53), (55), (58), (59), and (61).…”

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confidence: 83%

“…Examples include the use of the spin-currentinduced Hall effect [47], magnetic resonance [48], and optical techniques [49]. The measurement of the chemical potentials V S reduces to the measurement of electric and spin currents.…”

Section: Appendix B: Detection Of Spin Currents I S and Chemical Potementioning

confidence: 99%

Fluctuation relations for spin currents

Wang

Feldman

2015

Phys. Rev. B

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The fluctuation theorem establishes general relations between transport coefficients and fluctuations in nonequilibrium systems. Recently there was much interest in quantum fluctuation relations for electric currents. Since charge carriers also carry spin, it is important to extend the fluctuation theorem to spin currents. We use the principle of microscopic reversibility to derive such theorem. As a consequence, we obtain a family of relations between transport coefficients and fluctuations of spin currents. We apply the relations to the spin Seebeck effect and rectification of spin currents. Our relations do not depend on a microscopic model and hence can be used to test the validity of theoretical approximations in spin-transport problems.Comment: 17 pages, 6 figures. Final version as accepted by PR

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“…There has been a growing theoretical and experimental interest focused on the spin-Hall effect (SHE), which refers to the generation of spin currents from charge currents via the spinorbit interaction [1][2][3][4][5][6][7]. The spin-orbit interaction responsible for the SHE may also cause the inverse spin-Hall effect (ISHE), which is the process that converts a spin current into an electric voltage [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Spin pump induced inverse spin Hall effect observed in Bi-doped n -type Si

et al. 2020

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An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization precession during ferromagnetic resonance in a thin permalloy (Py) layer deposited on a Si layer doped by phosphor and bismuth. From the angular dependences of the dc voltage for different Py/n-Si:Bi structures aligned along the [011] or [100] crystal axes, we were able to distinguish the planar Hall effect (PHE) and ISHE contributions. The ISHE dc voltage signal was proportional to   2 sin sin  product for the structure aligned to the [011] crystal axis and to   2 cos sin  for the [100] direction. In addition, the PHE dc voltage was observed for the angles corresponded to thesin2θ dependence. It means that for silicon as a many-valley semiconductor, the scattering of spins due to the spin-orbit potential induced by shallow donor in n-type material is dependent on the orientation of the valley axes relative to the direction of the magnetic field.

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Measurement of spin current using spin relaxation modulation induced by spin injection

Cited by 14 publications

References 11 publications

All-oxide system for spin pumping

All-oxide system for spin pumping

Fluctuation relations for spin currents

Spin pump induced inverse spin Hall effect observed in Bi-doped n -type Si

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