Measurement of Si 311 defect properties using x-ray scattering

Nordlund, K.; Metzger, T. H.; Malachias, A.; Capello, L.; Calvo, P.; Claverie, A.; Cristiano, Fuccio

doi:10.1063/1.2081111

Cited by 6 publications

(9 citation statements)

References 23 publications

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“…(b) Depth profile of the lattice strain (Áa/a, left axis) and of the static Debye-Waller factor (L h , right axis). ment close to (1.3, 1.3, 0) is uniquely sensitive to {113} defects, as recently confirmed experimentally by Nordlund et al (2005). In particular, the calculated DXS distribution in the plane is characteristic for the predominant type of {113} defect and the exact location of the maximum of scattered intensity is used to distinguish the different defect types unambiguously.…”

Section: Detection Of Extended Defectssupporting

confidence: 63%

“…6(a), the presence of the {1Hex}ZD type is attested. The DXS lateral maxima are not observed experimentally because the size distribution of the defects present in the real sample is not accounted for in the calculation (Nordlund et al, 2005). As discussed for faulted loops, the full width at half-maximum of the DXS streak in reciprocal space is used to estimate the mean width of the {1Hex}ZD defect.…”

Section: Detection Of Extended Defectsmentioning

confidence: 99%

“…The mean length of 320 AE 13 Å was measured from a transversal scan (not shown here) in the angular direction centred at (1.25, 1.25, 0). A more detailed description of the DXS method for the investigation of {113} defects in Si can found in works by Nordlund et al (2005) and Capello (2005).…”

Section: Detection Of Extended Defectsmentioning

confidence: 99%

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Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods

et al. 2006

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The use of a combination of X-ray scattering techniques for the complete characterization of ultra-low-energy (E< 5 keV) implanted Si is discussed. Grazing incidence diffuse X-ray scattering (GI-DXS) reveals the properties of the defects confined within thin crystalline layers with depth resolution. Due to the weak diffuse intensity arising from such defects, the high brilliance of synchrotron radiation is required. GI-DXS proved to be particularly well suited for the investigation of the so-called `end-of-range' defects. In a complementary way, X-ray diffraction (XRD) in the vicinity of the 004 Bragg reflection is sensitive to the distribution of the strain in the Si lattice in the direction perpendicular to the sample surface. The structural characterization is complemented by the electron density profile of the near-surface amorphous region provided by specular reflectivity (SR). It will be shown that only by merging the results obtained with GI-DXS, XRD and SR, is it possible to obtain the detailed structural characterization of the implanted Si samples.

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Section: Detection Of Extended Defectssupporting

confidence: 63%

Section: Detection Of Extended Defectsmentioning

confidence: 99%

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Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods

et al. 2006

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“…Therefore, although the defect density decreases for higher temperatures, the average defect size becomes larger. 17 Since defect formation is a thermally activated phenomenon, as stated before, this latter effect is directly related to the enhancement of atomic diffusion at higher temperatures. Since at higher growth temperatures adatoms impinging the surface exhibit larger mobility they are able to reach the preferential nucleation sites, which are in the vicinity of the defects, leading to the observed defect elongation as well as to the lower defect density.…”

Section: ■ Results and Discussionmentioning

confidence: 77%

Nondestructive Monitoring of Defect Evolution in Epitaxial CdTe Thin Layers Grown on Si(111)

et al. 2014

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Reduction of crystalline defect density and size is a major issue in optimization of thin film for industrial scale applications. It is particularly hard to achieve defect minimization due to the lack of statistically relevant techniques where defectinduced strain information is also available. In this work, we use a combination of highresolution transmission electron microscopy and synchrotron X-ray diffraction to investigate the evolution of defects during the growth of highly mismatched cadmium telluride (CdTe) films on silicon(111) as a function of growth temperature and layer thickness. High-resolution transmission electron microscopy was employed to show that the grown layers are epitaxial, following the [111] substrate orientation, and to identify the main defect type (double twins). Detailed reciprocal space maps obtained by synchrotron X-ray diffraction were used to identify the presence of additional intensities near the ( 113) and ( 002) CdTe bulk reciprocal space positions caused by these defects. Analysis of these maps allowed to retrieve the strain of the atoms inside defects as well as to evaluate their average size and density. We show that defect density decreases as a function of temperature but increases as a function of layer thickness, while defect size and the elastic energy of the atoms inside each defect increases up to 400 °C.

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“…Such extraordinary peaks, when detected, were maximized by scanning the sample azimuthal angle. Computational analysis of the retrieved X-ray results was carried out using a custom-written MATLAB script for the kinematical model (Als-Nielsen & McMorrow, 2011;Nordlund, 2002;Nordlund et al, 2005;Oliveira et al, 2014), described in the following section.…”

Section: Methodsmentioning

confidence: 99%

Retrieving the configuration of grain boundary structure in polycrystalline materials by extraordinary X-ray reflection analysis

Aarão-Rodrigues¹,

Isaac²,

Figueiredo³

et al. 2020

J Appl Cryst

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The development of materials is strongly related to our capability of understanding thermal, mechanical and chemical processing on the nanoscale. Unravelling the interface structure is crucial for opening new regimes in property–performance space. Interface arrangements have been characterized by statistically limited microscopy techniques. In this work, a large-angular-range detector was used for synchrotron diffraction measurements on commercially pure Mg. Long acquisitions allowed the retrieval of preferred interface configurations through the observation of extraordinary diffraction peaks located close to the Mg 102, 200, 204 and 300 fundamental reflections. A kinematical simulation scanning possible interface structures established the correspondence of the non-bulk peaks to the interfacial organization of atoms that may be responsible for their appearance. Simulated interfaces were probed for a wide range of angular displacements with respect to the main cleavage planes. The results indicate configurations that allow the observation of X-ray diffraction, representing a long-range-ordered pattern of atomic distributions in Mg. The introduced methodology allows for nondestructive monitoring of systems that undergo processes that modify grain sizes and grain-interface orientation.

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Measurement of Si 311 defect properties using x-ray scattering

Cited by 6 publications

References 23 publications

Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods

Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods

Nondestructive Monitoring of Defect Evolution in Epitaxial CdTe Thin Layers Grown on Si(111)

Retrieving the configuration of grain boundary structure in polycrystalline materials by extraordinary X-ray reflection analysis

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