Measurement of Pendellösung Fringes of a Single Silicon Crystal Using the Pulsed Neutron Source for Neutron EDM Search

Abstract

The results of the measurement of Pendellösung interference fringes of a single silicon crystal are reported. The Pendellösung fringes are utilized to measure the internal electric field of a non-centrosymmetric crystal for neutron EDM measurement based on crystal diffraction. The experiment was performed using the pulsed neutron source of MLF BL17 at J-PARC. The obtained scattering length of a silicon from the Pendellösung fringes was 4.1±0.6 fm, which was consistent with the standard value of NIST. Statistical uncertainty was considerably large due to the low contrast and poor statistics of the Pendellösung fringes. The possible improvement of the measurement methodology is also discussed.