Measurement of Noise Wave Correlation Matrix for On-Wafer-Type DUT Using Noise Power Ratios

Abstract

In this paper, we propose a method for defining the input termination for on-wafer-type device under test (DUT) measurement. Using the newly defined input termination and noise wave correlation matrix (NWCM) measurement method based on noise power ratio, the NWCM of the on-wafer-type DUT was measured. We demonstrate a noise measurement configuration that includes wafer probes and bias tees to measure the on-wafer DUT. The S-parameter of the adapter that combines the bias tee, probe, and a line terminated by open is required to define the input termination for on-wafer DUT measurement. To measure the S-parameter of the adapter, a 2-port S-parameter measurement method using 1-port measurement is introduced. Using the measured S-parameters, a method for defining the new input termination for on-wafer-type DUT measurement is applied. The proposed method involves the measurement of the NWCM of the chip with a 1.5 dB noise figure. The noise parameters of the chip were obtained using the measured NWCM. The results indicate that the obtained values of the noise parameters are similar to those mentioned on a datasheet for the chip. In addition, repeated measurements yielded similar results, thereby confirming the reliability of the measurements.