Measurement of minority carrier lifetimes in nanocrystalline silicon devices using reverse-recovery transient method

Calculation of defect densities in nano-crystalline and amorphous silicon devices using differential capacitance measurements

“…The trap density was then measured for each sample and can be found in Figure 5 Thus it is observed that increased oxygen greatly increases the defect density of nc-Si devices, and therefore harms the performance. These agree very well with both internal [14] and external [15] Oxygen content vs trap density…”

“…One of the major contributors to decreased lifetimes is trap states. A study using reverse recovery transients clearly showed that increased defects led to decreased lifetimes [14] in nc-Si. This result is detailed in Figure 2-2.…”

“…This result was calculated for nc-Si at the Microelectronics Research Center at Iowa State University. The measurement was made using reverse recovery transient techniques[14].…”

Alternative designs for nanocrystalline silicon solar cells

“…The < 220 > grains are thermodynamically more favorable, and are also conducive to carrier transport. The When we compare the relative QE plotted vs. applied bias for two devices, one grown at 275C and the other at 500C we find that their QE ratios are very similar, especially The difference in the quality of the intrinsic layer is reflected in life time measurements done using a reverse recovery transient (RRT) method [51]. The RRT waveforms can be seen in 4.27.…”

Photovoltaic activity in benzobisoxazole based conjugated polymers

“…A normalized QE measurement is generally used for our devices where they are normalized at the peak value which is set to 0.90 or 90%. To determine the actual QE of the device a reference cell with a known QE and area is used where [19]…”