2000
DOI: 10.1016/s0168-9002(99)00860-8
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Measurement of material uniformity using 3-D position sensitive CdZnTe gamma-ray spectrometers

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Cited by 27 publications
(13 citation statements)
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“…If the exponential relation of the electron trapping from the cathode to the anode side (excluding the region very close to the anode) is used to calculate the electron mobility-lifetime product [14], the will be overestimated for the peripheral pixels, as can be seen in Fig. 12(a).…”
Section: Weighting Potentialmentioning
confidence: 99%
“…If the exponential relation of the electron trapping from the cathode to the anode side (excluding the region very close to the anode) is used to calculate the electron mobility-lifetime product [14], the will be overestimated for the peripheral pixels, as can be seen in Fig. 12(a).…”
Section: Weighting Potentialmentioning
confidence: 99%
“…This offers a modular detector configuration with a minimal dead area at the periphery. Thirdly, as demonstrated by He et al [5,6], the depth-of-interaction (DOI) of gamma rays in pixelated CZT detectors can be derived using the ratio between signal amplitudes observed on both the anode and cathode (C/A ratio). For future ERPC detectors with relatively thick (2-4 mm) crystals, a similar scheme can be implemented to provide 3-D position sensitivity at an excellent resolution.…”
Section: Conclusion and Discussionmentioning
confidence: 99%
“…If we reduce the thickness by 3 mm we can keep a 3mm spatial resolution at the price of a slight reduction in sensitivity (from 85% to 70%). Another possibility is a direct measure of the DOI which is a Advances in Molecular Imaging fashionable subject with semiconductor detectors [32] [33] [34].…”
Section: The Problem Of Doi and High Count Ratementioning
confidence: 99%