Measurement of magnetization using domain compressibility in CoFeB films with perpendicular anisotropy

Abstract

Équipe 101 : Nanomagnétisme et électronique de spinInternational audienceWe present a method to map the saturation magnetization of soft ultrathin films with perpendicular anisotropy, and we illustrate it to assess the compositional dependence of the magnetization of CoFeB(1 nm)/MgO films. The method relies on the measurement of the dipolar repulsion of parallel domain walls that define a linear domain. The film magnetization is linked to the field compressibility of the domain. The method also yields the minimal distance between two walls before their merging, which sets a practical limit to the storage density in spintronic devices using domain walls as storage entities

Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness

“…We found that the variation of the effective DMI field can be attributed to the details of the Pt/Co interface, which indicates that the influence on adjacent interfaces of MgO could be used to regulate the interfacial DMI thanks to a large charge transfer and the interfacial electric field 19 . We also unveiled that the insertion of monoatomic Mg can help tuning of DMI through the MgO layer and get a large value up to 2.32 mJ m 2 ⁄ .…”

Optimization of top-pinned perpendicular anisotropy tunnel junctions through Ta insertion

“…We have used the convention that 0 H J ¼ J=ðtM S Þ where for the PL we have t = 16 Å, and M S = 1 MA=m. 26) We typically detect two distinct FMR modes (Fig. 4) except for the Ta 3 Å sample for which the highest frequency mode is not detected.…”

Role of exchange interaction in nitrogen vacancy center based magnetometry

“…FMH have been used as a platform for practical spintronic devices, such as spinHall [1][2][3][4][5] and spin-orbit-based memories [6][7][8], anomalous Hall, and topological Hall-based sensors [9]. In such systems, the spin density can be detected by many methods, such as magneto-optic Kerr effect (MOKE) [10,11], ferromagnetic resonance (FMR) [12], and electrical measurements [13,14]. In the characterization of the FMH devices, a spatial resolution of the spin distribution up to the order of µm has been achieved by MOKE [11], and up to sub-µm using magnetic force microscopy (MFM) [15].…”

“…In such systems, the spin density can be detected by many methods, such as magneto-optic Kerr effect (MOKE) [10,11], ferromagnetic resonance (FMR) [12], and electrical measurements [13,14]. In the characterization of the FMH devices, a spatial resolution of the spin distribution up to the order of µm has been achieved by MOKE [11], and up to sub-µm using magnetic force microscopy (MFM) [15]. However, with the advancement of device fabrication at nanoscale, it requires detection and imaging technique that can provide nanoscale resolution as well as high sensitivity.…”