Measurement of ion species ratio in the plasma source ion implantation process

Tang, Baoyin; Fetherston, R.P.; Shamim, M.; Breun, R.; Chen, A.; Conrad, J.R.

doi:10.1063/1.352852

Cited by 41 publications

(13 citation statements)

References 17 publications

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“…For the reactive gases the ion species ratio in the plasma has large influence on the atomic composition of the implanted target. N 2 plasma contains many more N 2 + ion species than N + ion species whereas O 2 contains slightly more O 2 + ion species than O + [17]. Because the average number of atoms per ion in a nitrogen PSII is higher than in an oxygen PSII, a larger change in surface resistivity was obtained with nitrogen ion species than oxygen ion species.…”

Section: Resultsmentioning

confidence: 95%

Surface analysis of polymers electrically improved by plasma-source ion-implantation

et al. 2002

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Inert-gas (Ar, Xe) and reactive-gas (O(2), N(2)) plasma-source ion-implantation (PSII) treatment of PI, PET, PS-BD, and MPPO surfaces was performed at an ion energy of 30 keV to improve the electrical properties of the polymers. The effect of ion energy, treatment time, rf frequency, and power on the surface resistivity of polymer was investigated. Depending on ion energy, dose, and ion species, the surface resistivity of the film was reduced by several orders of magnitude. XPS, TOF-SIMS, and SEM were used to characterize MPPO surfaces treated by Ar-PSII and Xe-PSII. From these measurements it was found that the improvement in surface resistivity after PSII treatment was related to graphite carbon or cross-linked carbon-double-bond species formed on the surface.

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Section: Resultsmentioning

confidence: 95%

Surface analysis of polymers electrically improved by plasma-source ion-implantation

et al. 2002

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“…This result suggests that N 2 + is dominant ion species in N 2 plasma discharge. It was also reported by B. Y. Tang et al [17] that 70 -80% molecular ions of N 2 + were observed in their measurement system. Therefore, it is expected that the distribution of implanted N in Si is close to that for N 2 + implantation case.…”

Section: Methodsmentioning

confidence: 82%

Surface Modification of Silicon Substrates due to Nitrogen Implantation by Plasma Based Ion Implantation

Nakao

2010

Trans. Mat. Res. Soc. Japan

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A plasma based ion implantation (PBII) to Si wafers with N ions is performed and the surface modification of Si, i.e., the compositional and structural changes at the surface, are examined by energy dispersive X-ray spectrometer (EDX), Raman and Fourier Transform Infrared (FT-IR) spectroscopy, Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) measurements and X-ray photoelectron spectroscopy (XPS). To check ion species in N 2 plasma, optical emission spectroscopy is also carried out. The implantation time is varied from 10 min to 7 h. It is found that the N concentration is increased with increasing implantation time up to 1 h, and then tends to be saturated at further implantation time. The results of Raman measurements indicate that the small peaks from a-Si and/or a-SiN x appear after N ion implantation in addition to the Raman peak from Si crystal. It is also confirmed by FT-IR and XRD measurements that a broad peak assigned to Si-N bonds appears and no crystal phases of Si 3 N 4 is observed after N ion implantation. That the maximum N areal density is approximately 1.7 x 10 17 atoms/cm 2 is obtained for the sample implanted for 7 h. The XPS results show that implanted N mostly bonds to Si, and the ratio of N/Si at the surface is slightly increased over 1 h until 7 h. Judging from these results, it is suggested that a-SiN x is formed on Si wafer by N ion implantation using PBII system.

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“…This may be the effect of our supplementary HV high current pulse applied over the RF discharge, which increases the dissociative rate of N 2 molecules providing a higher density of N + ions [15] which penetrate deeper than N 2 + ions. Tang et al [15] simulated the nitrogen atomic concentration vs. implanted depth profile, showing that the range increase with N + to N 2 + ratio.…”

Section: Resultsmentioning

confidence: 95%