Measurement of in-plane and depth strain profiles in strained-Si substrates

Ogura, Atsushi; Kosemura, Daisuke; Yamasaki, Kosuke; Tanaka, Satoshi; Kakemura, Yasuto; Kitano, Akiko; Hirosawa, Ichiro

doi:10.1016/j.sse.2007.01.002

Cited by 18 publications

(12 citation statements)

References 18 publications

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“…Another is so-called local strained Si technology. The former is the technology of using a strained Si substrate which has a several-dozen-nanometers-thick strained Si layer at the top of the substrate [3][4][5]. The strained Si layer is obtained by growing Si on SiGe, therefore, large tensile strain with biaxial isotropy can be induced in Si.…”

Section: Introductionmentioning

confidence: 99%

“…Among them, Raman spectroscopy has the advantages such as high sensitive to local strain, submicron spatial resolution, nondestructive measurements, fast measurements, and ease of use. Consequently, Raman spectroscopy has been frequently used by many researchers to measure the strain in Si [3,[7][8][9][17][18][19][20][21]. However, conventional Raman spectroscopy fails to measure the complicated stress states in Si.…”

Section: Introductionmentioning

confidence: 99%

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Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Kosemura¹,

Tomita²,

Usuda³

et al. 2012

Advanced Aspects of Spectroscopy

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Kosemura¹,

Tomita²,

Usuda³

et al. 2012

Advanced Aspects of Spectroscopy

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“…For instance, Raman mapping enables to check the crystalline quality [ 6 , 7 ], the composition [ 8 , 9 ], the doping level [ 10 - 13 ], or the uniformity of as-grown semiconductor materials. Along this line one on the most popular applications in microelectronics is strain measurements, either at the device or at the full wafer scale [ 9 , 14 - 17 ]. Raman measurements can also be used for final device inspection, through the temperature mapping of operating devices like FETs, lasers, and actuators [ 18 - 21 ].…”

Section: Introductionmentioning

confidence: 99%

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

et al. 2011

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Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C- and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process results in the growth of long and isolated graphene ribbons (up to 600 μm) that are strain-relaxed and lightly p-type doped. In this case, combining the results of micro-Raman spectroscopy with micro-transmission measurements, we were able to ascertain that uniform monolayer ribbons were grown and found also Bernal stacked and misoriented bilayer ribbons. On the Si-face, the situation is completely different. A full graphene coverage of the SiC surface is achieved but anisotropic growth still occurs, because of the step-bunched SiC surface reconstruction. While in the middle of reconstructed terraces thin graphene stacks (up to 5 layers) are grown, thicker graphene stripes appear at step edges. In both the cases, the strong interaction between the graphene layers and the underlying SiC substrate induces a high compressive thermal strain and n-type doping.

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“…However, because of the inevitable defects, mainly misfit and/or threading dislocations, in the strained-Si layer, the device performance has not been improved sufficiently yet. 3,4) Moreover, the fabrication cost is still too high to apply commercial large-scale integration (LSI) fabrication. This technique is called the ''global strain'' method because the strained-Si layer exists throughout the wafer.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor

Kosemura

Kakemura

Yoshida

et al. 2008

jjap

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Strain evaluation in a small area is required because the extremely short channel length in state-of-the-art metal-oxidesemiconductor field-effect transistors (MOSFETs) leads to a narrow and shallow channel region. The strain in this limited area strongly affects the device performance owing to carrier mobility modification. We used UV-Raman spectroscopy with a quasi-line-shape excitation source and a two-dimensional charge-coupled-device detector in order to evaluate the strain distribution in Si or Si-on-insulator (SOI) substrates with a patterned SiN x film. As results, the strain was concentrated at the SiN x /Si interface and SiN x film pattern edge. A large tensile (compressive) strain was induced by the SiN x film with inner tensile (compressive) stress in the space region that corresponds to a channel region of the n-or p-MOSFETs. We assume that these large strains in the space region are the origin of the mobility enhancement in n-or p-MOSFETs. Furthermore, in addition to the size effect of channel length, we confirmed that the strain could be controlled by changing SiN x film thickness, film stress, and the substrate (SOI or bulk-Si). The quantitative evaluation of strain by means of simulation is also discussed.

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Measurement of in-plane and depth strain profiles in strained-Si substrates

Cited by 18 publications

References 18 publications

Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor

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