Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers

Henry, C. H.; Logan, R. A.; Merritt, F. R.

doi:10.1063/1.328091

Cited by 238 publications

(38 citation statements)

References 16 publications

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“…The optical gain spectra are related to the spontaneous emission spectra from the detailed balance be tween absorption and emission of photons. 5,[12][13][14][15] That is, the modal gain from spontaneous emission is given by…”

Section: A Methods I: Measurement Of Spontaneous Emission and The Usementioning

confidence: 99%

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Optical gain measurements based on fundamental properties and comparison with many-body theory

Keating

Park

Minch

et al. 1999

Journal of Applied Physics

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We present high accuracy measurements of gain, loss, and transparency energy in long-wavelength semiconductors based on a hybrid approach using the fundamental relationship between the gain and the spontaneous emission spectra. Independent measurements of optical gain, transparency energy, and loss show the accuracy and validity of this technique. These results are compared with those obtained by the non-Markovian gain model with many-body effects under the spontaneous emission transformation method. It is found that the hybrid approach for the gain spectrum alleviates many of the problems related to the poor signal to noise ratio in the amplified-spontaneous emission near and below the band edge. The theoretical spectra compare well with the measured spectra for both the transverse electric and transverse magnetic polarizations.

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Section: A Methods I: Measurement Of Spontaneous Emission and The Usementioning

confidence: 99%

“…5,[12][13][14][15] It guarantees that artifacts mentioned above are circumvented independent of the line shape functions �Lorentzian, Gaussian, or others�. Also, the slow convergence of the Lorentzian leads to a very long tail of the gain spectra into the band gap, in contradic tion to experimental observations.…”

Section: Introductionmentioning

confidence: 99%

Optical gain measurements based on fundamental properties and comparison with many-body theory

Keating

Park

Minch

et al. 1999

Journal of Applied Physics

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“…͑1͒, can be related to the absorption coefficient ␤ abs ͑ ͒ through the socalled Kubo-Martin-Schwinger ͑KMS͒ relation. [19][20][21][22] Our calculation includes the level broadening, which generalizes the KMS relation, and leads to 23…”

Section: Spontaneous Emissionmentioning

confidence: 99%

Many-body effects on optical carrier cooling in intrinsic semiconductors at low lattice temperatures

Huang

Alsing

2008

Phys. Rev. B

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YY) SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)AFRL/RVSS SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION / AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. (Clearance #RV08-261 -10 Apr 08). SUPPLEMENTARY NOTES"Government Purpose Rights." Interim Report for in-house DF621940. Published in the Physical Review B, Vol 78, p 035203 (2008). ABSTRACTBased on the coupled density and energy balance equations, a dynamical model is proposed for exploring many-body effects on optical carrier cooling (not lattice cooling) in steady state in comparison with the earlier findings of current-driven carrier cooling in doped semiconductors [X.L. Lei and C.S. Ting, Phys. Rev. B32, 1112 (1985)] and tunneling-driven carrier cooling through discrete levels of a quantum dot [H.L. Edwards et al., Phys. Rev. B52, 5714 (1995)]. This dynamical carrier-cooling process is mediated by a photoinduced nonthermal electron-hole composite plasma in an intrinsic semiconductor under a thermal contact with a low-temperature external heat bath, which is a generalization of the previous theory for a thermal electron-hole plasma [H. Haug and S. Schmitt-Rink, J. Opt. Soc. Am. B 2, 1135 (1985)]. The important roles played by the many-body effects such as band-gap renormalization, screening, and excitonic interaction are fully included and analyzed by calculating the optical-absorption coefficient, spontaneous emission spectrum, and thermalenergy exchange through carrier-phonon scattering. Both the optical carrier cooling and heating are found with increasing pump-laser intensity when the laser photon energy is set below and above the band gap of an intrinsic semiconductor. In addition, the switching from carrier cooling to carrier heating is predicted when the frequency detuning of a pump laser changes from below the band gap to above the band gap. Based on the coupled density and energy balance equations, a dynamical model is proposed for exploring many-body effects on optical carrier cooling ͑not lattice cooling͒ in steady state in comparison with the earlier findi...

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“…For example, frontfacet amplified spontaneous emission has long been used to study net modal gain during passage through the cavity. 1, 2 More recently, detailed analysis of spontaneous emission spectra from a top-contact window has provided valuable insights into higher confined multiquantum-well states, 3 gain nonlinearity, 4,5 recombination mechanisms, 6 and temperature sensitivity of the laser threshold. 7 The restriction on these techniques is that they can usefully be applied only below the laser threshold-a regime in which longitudinal variations may be neglected.…”

Section: ͓S0021-8979͑96͒02415-2͔mentioning

confidence: 99%

Longitudinal carrier density profiling in semiconductor lasers via spectral analysis of side spontaneous emission

Sargent¹,

Pavlidis²,

Anis³

et al. 1996

Journal of Applied Physics

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A combined experimental and theoretical approach to measuring the variation in carrier density along the length of a semiconductor laser is developed. It is shown that by following the rate of increase of the principal spectral peak, rather than monitoring the optical power at a fixed energy, measurements can be made less susceptible to the effects of heating in the sample. Experimental results showing the development of the longitudinal carrier density profile with injected current are presented and, when compared with the results of self-consistent modeling, provide insights into the internal operating mechanisms of the laser. © 1996 American Institute of Physics. ͓S0021-8979͑96͒02415-2͔Spontaneous emission from the active region of a semiconductor laser is rich in information, such as the relative strength of radiative transitions in the material, the local field intensity and carrier density, and the temperature. In order to determine these key parameters rigorously and selfconsistently, a number of independent measurements would be required; such an intricate and challenging investigation has yet to be reported. Instead, previous investigators have introduced simplifying assumptions or have neglected suitably small effects, focusing their attention on a regime in which these approximations are valid. For example, frontfacet amplified spontaneous emission has long been used to study net modal gain during passage through the cavity. 1,2 More recently, detailed analysis of spontaneous emission spectra from a top-contact window has provided valuable insights into higher confined multiquantum-well states, 3 gain nonlinearity, 4,5 recombination mechanisms, 6 and temperature sensitivity of the laser threshold. 7 The restriction on these techniques is that they can usefully be applied only below the laser threshold-a regime in which longitudinal variations may be neglected.Progress was recently made in the experimental characterization of longitudinal effects through the study of spontaneous emission over a fixed, narrow wavelength range at a few positions along the length of the laser cavity. 8 The results of this approach demonstrated the dependence of the degree of carrier nonpinning in the above-threshold regime on longitudinal position.We sought to combine the merits of these two approaches by studying spatial variations using the techniques of spectral analysis pioneered by the first group of authors. Our approach was two pronged. We began by examining theoretically the relationship between the local carrier density and the salient spectral features of the spontaneous emission. On the basis of this investigation, we formulated an experimental and analytical technique which benefited from a minimal sensitivity to changes in temperature and which exhibited a simple relationship between the carrier density and the intensity of the first quantum-well transition peak. With this new tool in hand, we embarked on a study of the longitudinal variations in the carrier density profile.We begin by describing our experime...

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Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers

Cited by 238 publications

References 16 publications

Optical gain measurements based on fundamental properties and comparison with many-body theory

Optical gain measurements based on fundamental properties and comparison with many-body theory

Many-body effects on optical carrier cooling in intrinsic semiconductors at low lattice temperatures

Longitudinal carrier density profiling in semiconductor lasers via spectral analysis of side spontaneous emission

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